Synthesis and characterization of Mo doped SnO2 thin films with spray pyrolysis

Turgut, G.; Sönmez, Erdal

doi:10.1016/j.spmi.2014.02.009

Cited by 79 publications

(24 citation statements)

References 48 publications

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“…As shown in the figure, there are pyramidal-shaped nanoparticles on films' surface and they are homogeneously scattered. The (2 1 1) preferential orientation observed from XRD analysis can probably state pyramidal particles and the similar results have been observed in the literature [14,39]. The variation of sizes of nanoparticles with Pr content is similar to the alteration of crystallite size from XRD analysis.…”

Section: Xrd Analysis Of Pto Thin Filmssupporting

confidence: 88%

Investigation of characteristic properties of Pr-doped SnO₂thin films

Turgut

2015

Philosophical Magazine

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In the present work, an investigation study on the crystal structure, surface morphology, electrical conductivity and optical transparency of spray-deposited Pr-doped SnO 2 was made as a function of Pr doping content. The Xray diffraction studies indicated that the films were grown at the (2 1 1) preferential orientation. The values of crystallite size and strain were determined using Williamson-Hall method and they varied between 71.47 and 208.76 nm, and 1.98 × 10 −3 -2.78 × 10 −3 . As seen from Scanning Electron Microscope micrographs, the films were composed of homogenous dispersed pyramidal-shaped grains. The n-type conductivity of films was confirmed with Hall Effect measurements, and the best electrical parameters were found for 3 at.% Pr doping level. The highest optical band gap and transmittance values were observed for undoped SnO 2 sample. The highest figure of merit (Φ), which is a significant parameter to interpret the usage efficiency of conductive and transparent materials in the optoelectronic and solar cell applications, was calculated to be 2.85 × 10 −5 Ω −1 for 1 at.% Pr doping content. As a result of this study, it may be concluded that Pr-doped SnO 2 films with above properties can be used as a transparent conductor in various optoelectronic applications.

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Section: Xrd Analysis Of Pto Thin Filmssupporting

confidence: 88%

Investigation of characteristic properties of Pr-doped SnO₂thin films

Turgut

2015

Philosophical Magazine

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“…So that, in general, band-gap energy of the un-doped metal oxides is lower than that of the doped metal oxides. Tin oxide is a degenerate semiconductor and its Fermi energy level is inside the conduction band [51,52]. When F À ion substitutes part of O À 2 , free electrons will be generated for charge compensation.…”

Section: Discussionmentioning

confidence: 99%

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

Tran

Fang

Chin

2015

Materials Science in Semiconductor Processing

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“…The variation of sheet resistance, resistivity and carrier concentration values with Nd doping can be explained that Nd has many oxidation states up to 6 þ [24] like Mo and W [14,15,25,26] and at low Nd doping contents, when Nd is incorporated in SnO 2 lattice, some of Nd 6 þ ions are substituted with Sn 4 þ ions and they give extra two free electrons to structure. This introduces an increase in number of free electrons and thus sheet resistance and resistivity drop off.…”

Section: Electrical Properties Of Ndto Thin Filmsmentioning

confidence: 99%

“…Tin oxide, one of the first transparent conductors [8,9], is a degenerate n-type semiconductor because of intrinsic defects (O vacancies or Sn interstitials) [10][11][12][13] and its properties can be highly tailored with suitable dopant elements. In earlier studies, SnO 2 structure has been doped with various dopant elements such as antimony (Sb), niobium (Nb), vanadium (V), fluorine (F), molybdenum (Mo), cadmium (Cd), indium (In), aluminum (Al), yttrium (Y), boron (B) and iron (Fe) [1,3,13,[14][15][16][17][18][19][20][21][22] and the effect of these elements on some TCO characteristic properties of SnO 2 has been investigated. As a result of these studies, it has been found that effectual displacement of Sn 4þ and O 2À ions in SnO 2 structure by A x þ (x44) and B À ions can improve electrical conductivity and optical transparency.…”

Section: Introductionmentioning

confidence: 99%