Synthesis and characterization of cubic BC2N grown by reactive laser ablation

Castillo, H.A.; Arango, P.J.; Vélez, Juan Manuel; Soto, G.; Cruz, W. de la

doi:10.1016/j.surfcoat.2010.05.025

Cited by 31 publications

(15 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lower energy peak at 283.3 eV (spectrum 2) is due to C bonding with B (C-B). [23][24][25] The higher energy peak at 286.0 eV (spectrum 3) is due to C bonding with N (C-N). 26 The chemical shifts, peak broadening, and bonding analysis described above indicate that boron, carbon, and nitrogen atoms bond with one another, and mix atomically.…”

Section: Fig 4 Electrical Transport Properties Of H-(bn)mentioning

confidence: 99%

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

View full text Add to dashboard Cite

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN)1-x(C2)x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN)1-x(C2)x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8)) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN)1-x(C2)x alloys n-type and corroborates the Hall-effect measurement results.

show abstract

Section: Fig 4 Electrical Transport Properties Of H-(bn)mentioning

confidence: 99%

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

View full text Add to dashboard Cite

show abstract

“…The peak located at 189.5 eV is attributed to the B-C bond because the binding energy of BC 3 has been found to be 189.5 eV [12,17]. An apparent shoulder peak near 188.1 eV indicates a contribution of B-B bond [3,9,18]. Those XPS results confirm that the B atoms have been chemically bonded with both the N and C atoms in the as-deposited films.…”

Section: Bonding Structurementioning

confidence: 57%

“…BCN films have been synthesized by many physical or chemical deposition techniques, including ion beam assisted deposition [4][5][6], radio frequency magnetron sputtering [2,7], pulsed laser deposition [8][9][10], and plasma-assisted chemical vapor deposition [11,12]. However, most of those studies only investigated the regulating of film composition or/and the estimating of bonding structure in order to confirm whether the prepared films were the products of atomic hybridization or just a macroscopic mixture of phase separation.…”

Section: Introductionmentioning

confidence: 99%

Influence of nitrogen pressure on bonding structure and mechanical properties of pulsed laser deposited BCN thin films

Jun

Wang

Shen

et al. 2015

Surface and Coatings Technology

View full text Add to dashboard Cite

“…7d. The main component at around 191.2 eV can be associated to B-N bonds [29]. Other minor components at around 188.3 and 193.3 eV can be associated to Si-B [27] and B-O bonds [27], respectively.…”

Section: X-ray Photoelectron Spectroscopy Studiesmentioning

confidence: 99%

Combined reactive/non-reactive DC magnetron sputtering of high temperature composite AlN–TiB2–TiSi2

et al. 2016

View full text Add to dashboard Cite

High temperature composite target AlN-TiB 2 -TiSi 2 with heterogeneous distribution of compounds (AlN-50 wt.%; TiB 2 -35 wt.%; TiSi 2 -15 wt.%) is used for sputtering via combined reactive/non-reactive DC magnetron sputtering onto substrate materials either cylindrical polished steel (Fe, 18%-Ni, 12%-Cr, 10%-Ti) 3 mm diameter or monocrystalline silicon. The gradient coating has been produced by sequential non-reactive and reactive sputtering of the target. The structural and morphological properties of the deposited films are analyzed by transmission electron microscopy, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. The tribo-mechanical properties are studied by means of nanoindentation and nanowear tests. The gradient film is composed of two layers with different microstructure and elemental composition. The first layer with thickness~200 nm is mainly based on light B, C and N as well metal elements Al, Si and Ti. The presence of very well distributed nanocrystals embedded in an amorphous matrix, with crystal sizes ranging from 5 to 40 nm is observed in the second layer~700 nm thickness and composed of Al, Ti, Si, B, and N. Films show very flat surfaces, with roughness around 0.35 nm. The hardness, elastic modulus, elastic recovery (W e ), H/E ⁎ ratio and H 3 /E ⁎2 ratio are determined as 17.55 GPa, 216.7 GPa, 60%, 0.08 and 0.12 GPa, respectively. Nanowear tests demonstrate relatively high wear resistance of the coatings. Samples show promising characteristics for hard protective adaptive coatings and diffusion barriers due to short propagation of dislocations in the amorphous matrix and the elastic and hard nature of the nanocomposite structure.

show abstract

Synthesis and characterization of cubic BC2N grown by reactive laser ablation

Cited by 31 publications

References 47 publications

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Influence of nitrogen pressure on bonding structure and mechanical properties of pulsed laser deposited BCN thin films

Combined reactive/non-reactive DC magnetron sputtering of high temperature composite AlN–TiB2–TiSi2

Contact Info

Product

Resources

About