Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin, M. R.; Doan, T. C.; Li, J.; Ziemer, Katherine S.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4894451

Cited by 22 publications

(10 citation statements)

References 26 publications

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“…It is clearly seen that, for all concentrations of carbon, separation of graphene (GR) and h‐BN phases appears. This result is in accordance with experimental results, that frequently report clustering of GR and h‐BN in ternary alloys . On the basis of our theoretical investigation, this result can be explained by the fact that C‐C and B‐N bonds are much more energetically favorable in comparison to C‐N and particularly to C‐B bonds, thus during MC simulation system tends to minimize number of the latter.…”

Section: Resultssupporting

confidence: 92%

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Jamróz

Majewski

2019

Physica Status Solidi (b)

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Theoretical studies of morphology, stability, and electronic structure of monolayer hexagonal CBN alloys with rich content of h-BN and carbon concentration not exceeding 50% are presented. The studies are based on the bond order type of the valence force field to account for the interactions between atomic constituents and Monte Carlo method with Metropolis algorithm to establish equilibrium distribution of atoms over the lattice. It is found that the phase separation into graphene and h-BN domains occurs in the majority of growth conditions. Only in N-rich growth conditions, it is possible to obtain a quasi uniform distribution of carbon atoms over the boron sublattice. It is been predicted that the energy gap in stoichiometric C x (BN) 1Àx alloys exhibits extremely strong bowing.

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Section: Resultssupporting

confidence: 92%

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Jamróz

Majewski

2019

Physica Status Solidi (b)

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“…All layers were grown using hydrogen as a carrier gas. Similar to previous studies, [38][39][40] high resolution x-ray photoelectron spectroscopy (XPS) measurements were employed to estimate the carbon doping concentration (N C ) and N C is around 1 Â 10 21 cm À3 as determined from XPS tight scans after removing surface contaminants by Arþ ion sputtering. Undoped h-BN epilayers with a thickness of about 60 nm were also grown at the same growth conditions for comparison measurements.…”

Section: (A) a A)mentioning

confidence: 99%

Probing carbon impurities in hexagonal boron nitride epilayers

Uddin

Lin

et al. 2017

Applied Physics Letters

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Carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (C B , carbon impurities occupying boron sites), and substitutional acceptors (C N , carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of C B donors in h-BN is E D $ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42-6.45 eV, and the C N deep acceptors have an energy level of about 2.2-2.3 eV. The results also infer that carbon doping introduces both shallow donors (C B) and deep acceptors (C N) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.

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“…All data were analyzed consistently using Multipak software package to determine the atomic compositions. 9,13 Table I shows average B, N, and C concentrations for the h-(BN) 1Àx (C 2 ) x epilayers grown under 1, 2, and 3 sccm NH 3 flow rates obtained from multiple measurements on a given sample. Quantification of errors was obtained from variation in XPS spectra when acquired from different regions of a given sample.…”

Section: Resultsmentioning

confidence: 99%

“…This was achieved via the use of square shaped sample geometry with small ohmic contacts fabricated on the four corners of the sample surface. 9,13,[17][18][19] The microscope image of a fabricated h-(BN) 1Àx (C 2 ) x alloy (x ¼ 0.95) sample with four ohmic contacts (Ni/Au bilayers) on the corners is shown in Fig. 2(a).…”

Section: Resultsmentioning

confidence: 99%

“…12 Despite the challenges, we have successfully synthesized homogeneous (BN)-rich h-(BN) 1Àx (C 2 ) x alloys (x 3.2%) by metal organic chemical vapor deposition (MOCVD) at relatively high growth temperatures ($1300 C) and demonstrated bandgap and electrical conductivity tuning in the alloy system. 9,13 However, very little work has been reported on synthesizing C-rich h-(BN)C alloys. C-rich h-(BN)C thin films (of $1 nm in thickness) with a maximum carbon concentration of $94.4% have been previously synthesized by CVD on Cu foil at a growth temperature of 1000 C. 14 It was shown that h-(BN)C materials on Cu foil were phase separated to randomly distributed domains of h-BN and C phases, rendering these materials less suitable for technologically significant electronic and photonic device applications.…”

Section: Introductionmentioning

confidence: 99%

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Carbon-rich hexagonal (BN)C alloys

Uddin

Lin

et al. 2015

Journal of Applied Physics

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Thin films of hexagonal boron nitride carbon, h-(BN) 1Àx (C 2) x , alloys in the C-rich side have been synthesized by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. X-ray diffraction measurements confirmed single hexagonal phase of h-(BN) 1Àx (C 2) x epilayers. Electrical transport and Raman spectroscopy measurements results revealed evidences that homogenous h-(BN) 1Àx (C 2) x alloys with x ! 95% can be synthesized by MOCVD at a growth temperature of 1300 C. The variable temperature Hall-effect measurements suggested that a bandgap opening of about 93 meV with respect to graphite has been obtained for h-(BN) 1Àx (C 2) x with x ¼ 0.95, which is consistent with the expected value deduced from the alloy dependence of the energy gap of homogenous h-(BN) 1Àx (C 2) x alloys. Atomic composition results obtained from x-ray photoelectron spectroscopy measurements revealed that the carrier type in C-rich h-(BN) 1Àx (C 2) x alloys is controlled by the stoichiometry ratio between the B and N via changing the V/III ratio during the growth. The demonstration of bandgap opening and conductivity control in C-rich h-(BN) 1Àx (C 2) x alloys provide feasibilities for realizing technologically significant devices including infrared (IR) emitters and detectors active from near to far IR and multi-spectral IR emitters and detectors.

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Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Cited by 22 publications

References 26 publications

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Probing carbon impurities in hexagonal boron nitride epilayers

Carbon-rich hexagonal (BN)C alloys

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