Synthesis and characterization of Bi-doped Mg2Si thermoelectric materials

Fiameni, S.; Battiston, Simone; Boldrini, Stefano; Famengo, A.; Agresti, F.; Barison, S.; Fabrizio, M.

doi:10.1016/j.jssc.2012.05.004

Cited by 65 publications

(29 citation statements)

References 25 publications

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“…It has been shown that MgO can cause additional grain boundary scattering and hence reduce carrier mobility and electrical conductivity. 28,34 . The main parameters used in or extracted from the model are summarized in Table 3.…”

Section: Electronic Transport Analysismentioning

confidence: 99%

Thermoelectric transport and microstructure of optimized Mg₂Si_0.8Sn_0.2

et al. 2015

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Solid solutions from magnesium silicide and magnesium stannide exhibit excellent thermoelectric properties due to a favorable electronic band structure and a reduced thermal conductivity compared to the binary compounds. We have optimized the composition Mg2Si0.8Sn0.2 by Sb doping and obtained a thermoelectric figure of merit close to unity. The material comprises of several phases and exhibits intrinsic nanostructuring. Nevertheless, the main features of the electronic transport can be understood within the framework of a single parabolic band model. Compared to Mg2Si we observe a comparable power factor, a drastically reduced thermal conductivity and an increased effective mass.This journal is

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Section: Electronic Transport Analysismentioning

confidence: 99%

Thermoelectric transport and microstructure of optimized Mg₂Si_0.8Sn_0.2

et al. 2015

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“…It has been reported that the combination of a nanocomposite structure along with the doping by a heavy atom, such as Bi, can provide a large number of carriers to optimize the TE properties of Mg 2 Si . To understand the effect of SiNW on the transport properties of heavily doped Mg 2 Si, we prepared samples with additions of Bi.…”

Section: Resultsmentioning

confidence: 94%

Thermoelectric Properties and Transport Mechanism of Pure and Bi‐Doped SiNWs‐Mg₂Si

Yang

Chen

Zhang

et al. 2018

Physica Status Solidi (a)

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Through the use of nano-Si wires as additive, a significant improvement in the thermoelectric (TE) properties of Mg 2 Si is achieved. SiNWs-Mg 2 Si materials are prepared by a wet etching method followed by field activated pressure assisted synthesis (FAPAS). The results show that the presence of SiNWs successfully decouples the relationship between the electrical resistivity and the Seebeck coefficient of Mg 2 Si. The effect of doping with Bi is also investigated. The results show that the addition of Bi changed the scattering mechanism, and a zT value of 0.47 is determined at 800 K for Mg 2 Si 0.99 Bi 0.01 -0.005SiNWs. The presence of MgO as an impurity and its effect on zT are discussed.

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“…It must be noted that Mg 2 Si, Mg, and MgO are not detected from XRD analysis even if the Mg and O are possibly incorporated in the films because the Mg disk is used as a target and oxygen is incorporated in the Al 2 O 3 substrates. 9 This is considered to be due to the small Mg content in the film (below 0.5 at.%) and the introduction of H 2 gas under the film deposition that produce a small oxygen partial pressure as well as the small diffusion of oxygen from the substrates due to the low deposition temperature.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Ca-Si Films on (001) Al2O3 Substrates by an RF Magnetron Sputtering Method and Their Electrical Properties

Uehara

Akiyama

Shiraishi

et al. 2016

Journal of Elec Materi

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The constituent phases, electrical conductivity, and Seebeck coefficient of Ca-Si films deposited on (001) Al 2 O 3 substrates by a radio frequency magnetron sputtering method using a Mg disk target with Ca and Si chips are investigated. X-ray diffraction analysis indicates that the films consist of a single phase of CaSi 2 , CaSi or Ca 5 Si 3 that are deposited together with the films consisting of a mixture of CaSi 2 and CaSi. Films with a CaSi 2 or CaSi single phase exhibit a metallic behavior. In contrast, films with a Ca 5 Si 3 single phase show p-type conduction and their Seebeck coefficient reaches 90 lV/K at 400°C.

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Synthesis and characterization of Bi-doped Mg2Si thermoelectric materials

Cited by 65 publications

References 25 publications

Thermoelectric transport and microstructure of optimized Mg₂Si_0.8Sn_0.2

Thermoelectric transport and microstructure of optimized Mg₂Si_0.8Sn_0.2

Thermoelectric Properties and Transport Mechanism of Pure and Bi‐Doped SiNWs‐Mg₂Si

Preparation of Ca-Si Films on (001) Al2O3 Substrates by an RF Magnetron Sputtering Method and Their Electrical Properties

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Synthesis and characterization of Bi-doped Mg2Si thermoelectric materials

Cited by 65 publications

References 25 publications

Thermoelectric transport and microstructure of optimized Mg2Si0.8Sn0.2

Thermoelectric transport and microstructure of optimized Mg2Si0.8Sn0.2

Thermoelectric Properties and Transport Mechanism of Pure and Bi‐Doped SiNWs‐Mg2Si

Preparation of Ca-Si Films on (001) Al2O3 Substrates by an RF Magnetron Sputtering Method and Their Electrical Properties

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Product

Resources

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Thermoelectric transport and microstructure of optimized Mg₂Si_0.8Sn_0.2

Thermoelectric transport and microstructure of optimized Mg₂Si_0.8Sn_0.2

Thermoelectric Properties and Transport Mechanism of Pure and Bi‐Doped SiNWs‐Mg₂Si