Copperâindiumâgalliumâselenide (CIGSe) is one of the most stable and promising materials for photovoltaic applications. Herein, the synthesis process of CIGSe nanocrystals using a triâoctyl phosphine/triâoctyl phosphine oxide (TOP/TOPO) method that has the shortest duration (â45âmin), as compared to other nonvacuumâbased approaches, is reported. Most solutionâbased approaches are Seâdeficient and therefore utilize a postâselenization process such as rapid thermal processing (RTP) at a high temperature to form CIGSe. RTP creates voids and defects in CIGSe films. The synthesis process does not need postâselenization processes as it is not Seâdeficient. It also includes the purification and processing techniques of these CIGSe nanocrystals for a variety of printing and coating techniques. The purification process offers improved charge transport between CIGSe nanocrystals for the realization of efficient photovoltaic device without resorting to soda lime glass (SLG), postâdeposition thermal selenization, or harsh chemical treatments. In addition, this process avoids the incidence of contamination, such as with copper selenide and amorphous carbon, which is a common issue in solutionâbased techniques, and thus provides highâpurity CIGSe ink. To identify the effects of the purification process, the synthesized ink is qualitatively and quantitatively characterized before and after each purification step.