Switching Dynamics and Hot Atom Damage in Landau Switches

Karda, Kamal; Mouli, Chandra; Alam, Muhammad Ashraful

doi:10.1109/led.2016.2562007

Cited by 17 publications

(13 citation statements)

References 21 publications

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“…Quasi-static NC-FET models argue that transistor operation does not require domain switching 5,43 , so that FE switching speed may not be relevant for NC-FET operation. An in-depth recent analysis 76 however concludes that an NC-FET will always switch slower than the corresponding Fe-FET. This limit reflects the fact that while the amount of polarization switching necessary for an NC-FET is substantially smaller than that of a Fe-FET, the internal field in the NC-FET is also substantially smaller than that of the Fe-FET.…”

Section: Most Importantly Experiments Must Be Interpreted Self-consimentioning

confidence: 99%

A critical review of recent progress on negative capacitance field-effect transistors

Alam

2019

Applied Physics Letters

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181

121

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The astounding progress of electronics in the 20 th century sometimes obscures the dramatic story of repeated reinvention of the underlying device technology. The reinventions were catalyzed by the limits of power dissipation and self-heating for the corresponding device technologies. In the 1950s, when the vacuum-tubes reached the power dissipation limits, the more power efficient bipolar transistors took over. In the 1980s, bipolar transistors were replaced by even more power efficient technology based on complementary metal-oxidesemiconductor (CMOS) field-effect transistors (FET). As power consumption, self-heating and scaling considerations threaten the scaling of CMOS at the twilight of Moore's law, it is not surprising that researchers are once again looking for a more scalable and energyefficient replacement, such as tunnel FET 1 , Nano-Electro-Mechanical (NEM)-FET 2 , spin-FET 3 , phase-FET 4 , etc. The negative capacitance field-effect transistor (NC-FET) proposed by Salahuddin and Datta 5 is a recent entry to the list.

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Section: Most Importantly Experiments Must Be Interpreted Self-consimentioning

confidence: 99%

A critical review of recent progress on negative capacitance field-effect transistors

Alam

2019

Applied Physics Letters

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181

121

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“…(2) The SiO x buffer layer impedes charge injection from the semiconductor substrate to ferroelectric material, as well as electron trapping in the gate stack. [120] (5) Moreover, the scalable thickness, environmental friendliness, and compatibility with semiconductor technologies have promoted HfO 2 -based ferroelectric to be a kind of valuable dielectric materials for future semiconductor industry. (4) Theoretically, because the lower limit of the polarization switching time of doped HfO 2 is ≈10-100 ps, the NCFET can have zero hysteresis at a working frequency of 1-10 MHz.…”

Section: Novel Ferroelectric Hfo 2 -Based Ncfetmentioning

confidence: 99%

“…(3) The SiO x buffer layer is usually very thin (a few nanometers), which facilitates the realization of nonvolatile practical devices. (4) Theoretically, because the lower limit of the polarization switching time of doped HfO 2 is ≈10–100 ps, the NCFET can have zero hysteresis at a working frequency of 1–10 MHz . (5) Moreover, the scalable thickness, environmental friendliness, and compatibility with semiconductor technologies have promoted HfO 2 ‐based ferroelectric to be a kind of valuable dielectric materials for future semiconductor industry …”

Section: Experimental Researches On Ncfetmentioning

confidence: 99%

Ferroelectric Negative Capacitance Field Effect Transistor

Wang

et al. 2018

Adv Elect Materials

115

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such as steep subthreshold swing (SS), high switching ratio (I on /I off ), adjustable hysteresis, compatibility with standard semiconductor fabrication processes, and environmental friendliness, promotes NCFET to be a promising candidate to lower power consumption and solve the heat problem in ULSI.As early as the 1960s, the concept of negative capacitance (NC) was proposed in amorphous semiconductor chalcogenides thin film, [25,26] then the NC effect was observed in several devices, such as p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal diodes, [31] and others. [32][33][34][35] Concretely, the NC effect occurs when the reciprocal of the second derivation of potential energy U with respect to the ferroelectric polarization charge Q F is negative, which is usually achieved during the switching process of ferroelectric polarization. [36,37] NCFET achieves steep SS through the NC voltage amplification effect by adding a ferroelectric layer into the transistor gate stack. [22] NCFET simulation methods vary according to the types of transistor gate structures-metal ferroelectric semiconductor field-effect transistor (MFSFET), metal ferroelectric insulator semiconductor field-effect transistor (MFISFET), and metal ferroelectric metal insulator semiconductor field-effect transistor (MFMISFET). However, the basic principle is to realize a match between the channel charge Q and the ferroelectric polarization charge P, [38][39][40][41][42] no matter what the specific gate structure is.Furthermore, the influencing factors of NCFET's electrical properties have been qualitatively analyzed and summarized according to numerous simulation results. Commonly, a tradeoff exists between SS and hysteresis, [22] and we can design and manipulate the gate structure, [41] ferroelectric thickness (t Fe ), [22] ferroelectric material parameters, [38] silicon doping concentration, [39,43] temperature, [44] work frequency, [45][46][47][48] and high-κ dielectric [23,49,50] to optimize the electrical performance of NCFET and meet specific practical application requirement.The experimental researches on NCFETs can be mainly classified into three categories based on various kinds of ferroelectrics. First, the NCFET based on organic ferroelectric-poly(vinylidene difluoride-trifluoroethylene)[P(VDF-TrFE)], has been experimentally demonstrated, and achieves minimum SS (SS min ) = 13 mV dec −1 with small hysteresis. [51,52] Second, the NCFET based on lead zirconate titanate (PZT), a type of inorganic perovskite-type ferroelectric, exhibits hysteretic switching with With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralargescale integration (ULSI) is limited by the physical barrier termed "Boltzmann Tyranny." Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field-effect transistor (Fe-NCFET) is proposed in order to reduce the subthresho...

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“…Therefore, the ferroelectric’s NC commonly partially gets stabilized, proposing a trade-off between the hysteretic behavior and the performance-boosting due to the NC effect. With the validity of NC concept being experimentally established 12,20–24 , it is now of paramount importance to understand the challenges involved in the design of NC-FETs, so that the steepness and the hysteresis of the device characteristic can be optimized in both n- and p-type MOSFETs. The theoretical limit for the minimum value of the SS of non-hysteretic NC-FETs has been proposed before 13 , however, a comprehensive experimental study that shows the relationship between the hysteretic behavior and steepness in negative capacitance transistors is still missing.…”

Section: Introductionmentioning

confidence: 99%

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Saeidi

Jazaeri

Stolichnov

et al. 2019

Sci Rep

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Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric materials is proposed in order to address this physical limitation of CMOS technology. A polarization destabilization in ferroelectrics causes an effective negative permittivity, resulting in a differential voltage amplification and a reduced subthreshold swing when integrated into the gate stack of a transistor. The novelty and universality of this approach relate to the fact that the gate stack is not anymore a passive part of the transistor and contributes to signal amplification. In this paper, we experimentally validate NC as a universal performance booster: (i) for complementary MOSFETs, of both n- and p-type in an advanced CMOS technology node, and, (ii) for both digital and analog significant enhancements of key figures of merit for information processing (subthreshold swing, overdrive, and current efficiency factor). Accordingly, a sub-thermal swing down to 10 mV/decade together with an enhanced current efficiency factor up to 10 5 V −1 is obtained in both n- and p-type MOSFETs at room temperature by exploiting a PZT capacitor as the NC booster. As a result of the subthreshold swing reduction and overdrive improvement observed by NC, the required supply voltage to provide the same on-current is reduced by approximately 50%.

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Switching Dynamics and Hot Atom Damage in Landau Switches

Cited by 17 publications

References 21 publications

A critical review of recent progress on negative capacitance field-effect transistors

A critical review of recent progress on negative capacitance field-effect transistors

Ferroelectric Negative Capacitance Field Effect Transistor

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

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