Switching characteristics of ZnO based transparent resistive random access memory devices grown by pulsed laser deposition

Abstract

Resistance switching characteristics, observed in metal oxide thin films, has recently attracted a great deal of attention to develop next generation low power, low cost, high speed, rugged and nonvolatile resistive random access memory (RRAM) devices. The memory effect in these materials is realized through the switching of the resistance of their thin films between two states of high and low resistances. Amongst the known metal oxides currently being explored for the development of RRAM, ZnO has been demonstrated to be a potential candidate. ZnO is an n‐type wide bandgap semiconductor and is highly transparent in the visible spectral region. Moreover its conductivity can be tailored in a broad range from metal like to insulator like by suitable impurity doping. Therefore it is possible to develop a fully transparent RRAM entirely based on ZnO. In this paper we report growth of a novel transparent RRAM devices based on ZnO and its variants. We studied the resistive switching characteristics of these devices and associated conduction mechanisms responsible for the switching. The details of this study will be presented in the paper (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

“…Obtaining favorable endurance properties is one of the major challenges for ZnO-based T-RRAM [7][8][9][10]. It has been suggested that the memory window should achieve the requirement of at least one order of magnitude to allow for small and highly efficient sense amplifiers [11,12].…”

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

“…Compared with the reported data, 1,[15][16][17][18][19] in addition to the small set/reset voltages, the proposed transparent ITO/ ACG/ITO memories also possess relative good performance in ON/OFF ratio and retention time. 1,[15][16][17][18][19] A highly transparent ITO/ACG/ITO RRAM has been presented.…”

“…1,[15][16][17][18][19] A highly transparent ITO/ACG/ITO RRAM has been presented. The Al-chelated gelatin biomaterial memory with a transmittance of 83% at 550 nm, an ON/OFF current ratio of more than 10 5 , bipolar resistive switching, and the set voltage of around À0.5 V can be achieved.…”

Effect of Current Compliance on Resistive Switching Characteristics of Amorphous Ternary Rare Earth Oxide SmGdO3 Thin Films Grown by Pulsed Laser Deposition

“…A typical RRAM device with metal-insulator-metal (MIM) structure undergoes the phenomenon of resistance change when activated by electrical signal and memory effect is realized through switching of the resistance of the device between the two states (high and low) of resistances (1)(2)(3). Depending on the polarity of the applied bias voltages, the resistance switching characteristic can be classified into two types unipolar or bipolar (4).…”