Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Abstract

Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

High-performance hysteresis-free perovskite transistors through anion engineering

“…Notably, the I/Br/Cl devices exhibited the smallest mobility variations (12%) owing to their greatly reduced hysteresis. Because a strong mobility–hysteresis correlation exists but has been usually neglected in previous research on perovskite TFTs 17 , we recommend more information on the measurement methods, device hysteresis, and mobilities extracted from both the forward and reverse scans of devices be provided. The hysteresis-free character is desired for a wide range of electronic applications, such as logic circuits and backplanes in OLED displays 35 .…”

Wide‐Bandgap Organic–Inorganic Lead Halide Perovskite Solar Cells

“…The NBG perovskites are beneficial not only for single-junction PSCs accessing the Shockley-Queisser (SQ) efficiency limit of ≈33.7% and acting as bottom absorbers in tandem photovoltaics but also for the construction of a wide-range of photodetectors and field-effect transistors. [10,11] The TBG perovskites have conferred PSCs with outstanding advancements, which have been summarized from various perspectives. [12][13][14][15] The WBG perovskites are of significance in semitransparent devices, dim indoor light conversion, photoelectrochemistry conversions generating energy-storing chemicals, tandem devices, spectrum-splitting systems, and light emitting diodes.…”

Enhanced Thermal Stability of Planar Perovskite Solar Cells Through Triphenylphosphine Interface Passivation

“…[9,10] Various reports have shown PSCs to be unstable even under standard operating conditions with maximum stability testing to date, clocked at only 10000 h. [11,12] The non-ideal performance and low stability are generally attributed to the low formation energy and polycrystalline nature of the perovskite. [13][14][15] These properties imply that a large number of non-stoichiometric defects and dangling bonds are unavoidably generated, particularly for solution-based processing such as spin coating. Due to the ionic nature of the perovskite absorber, defects found in the films are often assigned as either negatively or positively charged traps.…”