Swift heavy ion induced magnetic phase transition of Fe–Rh alloy

Fukuzumi, Masafumi; Chimi, Y.; Ishikawa, N.; Ono, F.; Komatsu, Seiji; Iwase, A.

doi:10.1016/j.nimb.2004.12.053

Cited by 23 publications

(11 citation statements)

References 7 publications

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“…For example, ion beam irradiation induces FM state in the Fe-50 at.% Rh bulk and film samples even at low temperatures where they are originally (or intrinsically) AF states without any structural phase transition [3][4][5][6]. In accordance with our systematic investigations, we revealed that density of energy deposited through elastic collisions between ion species and samples was a crucial factor in determining ion irradiation induced magnetization of FeRh samples [7].…”

Section: Introductionsupporting

confidence: 75%

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Matsui

Aikoh

Sakamaki

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionsupporting

confidence: 75%

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Matsui

Aikoh

Sakamaki

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…Low-energy ion-beam irradiation induced ferromagnetic states in the FeRh thin films at low temperatures, that originally exhibited antiferromagnetism, as effectively as high-energy ion-beam irradiation. [3][4][5][6] In addition, we also showed that the change in the magnetization could be controlled by the density of the energy deposited through the elastic collisions between the ion species and the samples. The low-energy ion-beam irradiation using a focused ion beam system is a potential technique to modify the magnetic properties of materials on the nano-and micro-scales, which may lead to a variety of novel spin devices and applications.…”

mentioning

confidence: 72%

Quantitative control of magnetic ordering in FeRh thin films using 30 keV Ga ion irradiation from a focused ion beam system

Aikoh

Kosugi

Matsui

et al. 2011

Journal of Applied Physics

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We investigated a low-energy ion-beam irradiation process for the magnetic modification of FeRh thin films using a focused ion beam system. Low-energy ion-beam irradiation induced ferromagnetic states in the FeRh thin films at low temperatures, that originally exhibited antiferromagnetism, as effectively as high-energy ion-beam irradiation. Because the energy deposited by the elastic collisions caused by the irradiation determined the magnetic properties of the samples, the magnetic state of the FeRh thin films could be quantitatively controlled. The low-energy ion-beam irradiation using a focused ion beam system is a potential technique to modify the magnetic properties of materials on the nano-and micro-scales, which may lead to a variety of novel spin devices and applications.

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“…A similar defect effect was reported by irradiation experiments using electron and heavy ions. 22,23 While electron irradiation decreases the transition temperature by 3-18 K without changing the B2 crystalline structure, the ion irradiation induces the FM stabilization (no AF-FM transition was observed down to 5 K).…”

Section: Resultsmentioning

confidence: 99%

Suppression of low-temperature ferromagnetic phase in ultrathin FeRh films

Han

Qiu

Yap

et al. 2013

Journal of Applied Physics

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Highly ordered B2 FeRh films with sharp magnetic transitions from the antiferromagnetic (AF) to ferromagnetic (FM) states were prepared on thermally oxidized Si wafers with thicknesses as low as 10 nm. It is found that the transition temperature increases as the thickness decreases from 80 nm to 15 nm, and then decreases from 15 nm to 10 nm. While the ratio of the residual magnetization to the maximum magnetization keeps nearly unchanged for the film thickness of 15 nm and larger, it increases significantly when the thickness is reduced to 10 nm. This residual magnetization was suppressed by slightly increasing the Rh atomic content in 10 nm thick FeRh films. Low-pressure deposition is found to play an important role in the stabilization of the AF phase. By depositing FeRh films at an extremely low pressure of 0.057 Pa, a residual magnetization as small as 13.5 emu/cc at 100 K was observed for a film with a nominal thickness of 10 nm deposited on Si wafer. This value was further reduced to 6 emu/cc when the film is deposited on MgO substrates due to much improved FeRh crystallinity. These results are in close agreement with theoretical predictions on defect and interface induced FM stabilization.

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Swift heavy ion induced magnetic phase transition of Fe–Rh alloy

Cited by 23 publications

References 7 publications

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Quantitative control of magnetic ordering in FeRh thin films using 30 keV Ga ion irradiation from a focused ion beam system

Suppression of low-temperature ferromagnetic phase in ultrathin FeRh films

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