Survey of CdTe nuclear detector applications

Entine, G.; Waer, P.; Tiernan, Timothy C.; Squillante, M.R.

doi:10.1016/0168-9002(89)91373-9

Cited by 33 publications

(4 citation statements)

References 10 publications

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“…Cadmium telluride detectors find a wide field of application as γ-ray spectrometers or counters for dosimetry, nuclear medicine or process control instrumentation [153], An energy resolution of 1 keV for 6 keV X-rays (Fe ka) and better than 3 keV for 122 keV γ-rays ( 57 Co) is recorded for detectors with a sensitive volume of one cubic centimetre [154]. High counting rates (10 5 /s) can be accommodated by CdTe detectors.…”

Section: A Cadmium Telluridementioning

confidence: 99%

3 Semiconductor Detectors

1997

Experimental Techniques in Nuclear Physics

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A. Sensitive region and charge collection 89 B. Detector materials 93 III. Germanium detectors 94 A. Lithium-drifted germanium detectors 94 B. Gamma-compensated germanium detectors 95 C. High-purity germanium detectors 95 D. Timing properties of germanium detectors 97 E. Radiation damage in germanium detectors 98 F. Temperature behaviour 98 IV. Silicon detectors 99 A. Silicon surface barriers and p-n junctions 99 B. Lithium-drifted silicon detectors 102 C. Position sensitive silicon detectors 103 D. Radiation damage in silicon detectors 106 E. Amorphous silicon detectors 108 V. Exotic materials 108 A. Cadmium telluride 109 B. Mercuric iodide 109 VI. Conclusion References 110

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Section: A Cadmium Telluridementioning

confidence: 99%

3 Semiconductor Detectors

1997

Experimental Techniques in Nuclear Physics

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“…Cadmium telluride (CdTe), a high Z (48, 52) and wide band gap (1'5 eV) semiconductor, is a suitable material for detection of 7-rays in nuclear applications such as medicine, reactor instrumentations and safety (Cuzin 1987;Entine et al 1989). Crystal growth by solution method at temperature lower than its melting point (1090°C) has been found to yield CdTe with lower dislocation density, a reduced precipitate density due to reduced deviation from stoichiometry and lesser contamination from container during growth (Wald and Entine 1978).…”

Section: Introductionmentioning

confidence: 99%

Solution growth of cadmium telluride

Sahoo

Srikantiah

1996

Bull. Mater. Sci.

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Cadmium telluride crystal has been grown by solution method from Te-rich (Cdo.3Teo. 7) melt. Ingots having 9mm diameter and length up to 30ram were grown by cooling the melt slowly (l~C/h) under a vertical temperature gradient of about 30~C/cm. As-grown ingots were characterized for optical transmission and resistivity. The middle portion of the ingots exhibited better optical transmission properties. Resistivity (p-type) was found increasing, towards the last-to-grow end, from 103 to 106 Q-cm. Surface barrier type of detectors, made from low resistivity (~_ 104 f~-cm) materials, were found suitable for detection of X-and low energy gamma radiations. In case of high resistivity (_~ 106 f2-cm) detectors, the performance was seen to be affected by polarization.

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“…[12][13][14][15] Unfortunately, stoichiometrically grown undoped CdTe crystals exhibit a low p-type resistivity due to the presence of native acceptor defects ͑Cd vacancies͒ and to the group I residual impurities like Na, Li, Cu, and K. One of the possible ways to increase CdTe resistivity is the compensation of native acceptors by doping with deep donors like Ge, Sn, or V. [16][17][18][19][20] The main drawback is that these dopants introduce fast recombination centers ͑the so-called S-centers͒, thus deteriorating the transport charge properties of CdTe crystals. [12][13][14][15] Unfortunately, stoichiometrically grown undoped CdTe crystals exhibit a low p-type resistivity due to the presence of native acceptor defects ͑Cd vacancies͒ and to the group I residual impurities like Na, Li, Cu, and K. One of the possible ways to increase CdTe resistivity is the compensation of native acceptors by doping with deep donors like Ge, Sn, or V. [16][17][18][19][20] The main drawback is that these dopants introduce fast recombination centers ͑the so-called S-centers͒, thus deteriorating the transport charge properties of CdTe crystals.…”

mentioning

confidence: 99%

Effect of Yb concentration on the resistivity and lifetime of CdTe:Ge:Yb codoped crystals

Sochinskii

Abellán

Rodrı́guez-Fernández

et al. 2007

Applied Physics Letters

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The resistivity and electron lifetime of CdTe:Ge:Yb crystals are reported, demonstrating that the effect of Yb concentration is crucial for accurate electrical compensation. It is also demonstrated that the codoping of CdTe with Ge as deep donor and with Yb as rare-earth element could be a promising way to obtain semiinsulating CdTe crystals with good transport properties. High resistivity (5×109Ωcm) and lifetime (9μs) were obtained, thus confirming the beneficial effect of rare-earth doping.

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Survey of CdTe nuclear detector applications

Cited by 33 publications

References 10 publications

3 Semiconductor Detectors

3 Semiconductor Detectors

Solution growth of cadmium telluride

Effect of Yb concentration on the resistivity and lifetime of CdTe:Ge:Yb codoped crystals

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