Effect of Yb concentration on the resistivity and lifetime of CdTe:Ge:Yb codoped crystals

Abstract

The resistivity and electron lifetime of CdTe:Ge:Yb crystals are reported, demonstrating that the effect of Yb concentration is crucial for accurate electrical compensation. It is also demonstrated that the codoping of CdTe with Ge as deep donor and with Yb as rare-earth element could be a promising way to obtain semiinsulating CdTe crystals with good transport properties. High resistivity (5×109Ωcm) and lifetime (9μs) were obtained, thus confirming the beneficial effect of rare-earth doping.

Effect of Rare Earth Doping on the Optical Quality of А2В6 Semiconductors

“…In this case, isovalent substitution of cations occurs. Doping of semiconductors with RE ions is also used in semiconductor technology in order to reduce the concentration of residual impurities and other defects that strongly affect their electronic properties, decreasing the lifetime and the diffusion length of photogenerated carriers [4]. Introduction of RE ions allows us to clean the semiconductor materials from the residual impurities as a result of the manifestation of the gettering effect [5].…”