A stack of annular detectors made of high purity germanium was used to measure simultaneously pd → 3 H π + and pd → 3 He π 0 differential cross sections at beam momenta of 750 MeV/c, 800 MeV/c, and 850 MeV/c over a large angular range. The extracted total cross sections for the pd → 3 He π 0 reactions bridge a gap between near threshold data and those in the resonance region. The ratio of the cross sections for the two reaction channels taken at the same η = p cm π /m π yields 2.11±0.08 indicating that a deviation from isospin symmetry is very small.

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Cadmium telluride crystal has been grown by solution method from Te-rich (Cdo.3Teo. 7) melt. Ingots having 9mm diameter and length up to 30ram were grown by cooling the melt slowly (l~C/h) under a vertical temperature gradient of about 30~C/cm. As-grown ingots were characterized for optical transmission and resistivity. The middle portion of the ingots exhibited better optical transmission properties. Resistivity (p-type) was found increasing, towards the last-to-grow end, from 103 to 106 Q-cm. Surface barrier type of detectors, made from low resistivity (~_ 104 f~-cm) materials, were found suitable for detection of X-and low energy gamma radiations. In case of high resistivity (_~ 106 f2-cm) detectors, the performance was seen to be affected by polarization.

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