2010
DOI: 10.1016/j.physe.2010.06.028
|View full text |Cite
|
Sign up to set email alerts
|

Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
7
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 10 publications
(7 citation statements)
references
References 25 publications
0
7
0
Order By: Relevance
“…Surfactants are elements with low solid solubilities that collect at a surface to reduce the overall surface energy, and are stable even with a large lattice mismatch and strain [30,31]. The behavior of Bi as a surfactant is well documented in the thin film growth literature [24,[32][33][34][35].…”
mentioning
confidence: 99%
“…Surfactants are elements with low solid solubilities that collect at a surface to reduce the overall surface energy, and are stable even with a large lattice mismatch and strain [30,31]. The behavior of Bi as a surfactant is well documented in the thin film growth literature [24,[32][33][34][35].…”
mentioning
confidence: 99%
“…When the impingent Bi atoms are balanced between desorption and incorporation to lattice sites, single crystal InP 1−x Bi x film is achieved with no Bi droplets on the surface formed by excess Bi atoms. In addition, Bi is known to be an excellent surfactant [8], which could improve the surface and interface quality. When the growth temperature is further decreased, excess Bi and P atoms tend to accumulate on InP deteriorating the surface and the structural quality.…”
Section: Effect Of Growth Temperaturementioning
confidence: 99%
“…Unlike dilute nitrides in which incorporating N atoms will significantly reduce the electron mobility and form a lot of non-radiative recombination centres, dilute bismides do not reduce the electron mobility for a small amount of Bi [7]. Bismuth could also act as a surfactant during III-V material growth [8], which makes the interface and/or surface much smoother, improving the optical properties of the materials.…”
Section: Introductionmentioning
confidence: 99%
“…The use of these computational methods, as applied to surfaces, has tremendously aided our understanding of the growth process. Such atoms, often referred to as surfactants, have altered the surface morphology, surface crystallographic structure, and defect structure of growing films [45,47,53,57,[166][167][168][169][170]. Once understood, there can be numerical investigations of various chemical pathways and reactions on the surface.…”
Section: Large-scale Computational Modelsmentioning
confidence: 99%