Surfactant effect of Bi on InAs quantum dot laser diode

Abstract

In this study, InAs multiple stacked quantum dot lasers were investigated in the 1.55 µm band using Bi surfactant effect. The Bi surfactant effect increased the size of the quantum dot and changed the emission wavelengths from 1522 to 1554 nm. Additionally, the surfactant effect improved the internal quantum efficiency of the fabricated broad-area laser from 33% to 54%.