Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation

Abstract

In this study, the effects of bismuth (Bi) irradiation on InAs quantum dot (QD) lasers operating in the telecommunication wavelength band were investigated. Highly stacked InAs QDs were grown on an InP(311)B substrate under Bi irradiation, and a broad-area laser was fabricated. In the lasing operation, the threshold currents were almost the same, regardless of Bi irradiation at room temperature. These QD lasers were operated at temperatures between 20 and 75°C, indicating the possibility of high-temperature operation. In addition, the temperature dependence of the oscillation wavelength changed from 0.531 nm/K to 0.168 nm/K using Bi in the temperature range 20–75°C.