Surface topology of GaSe oxidized crystals

Kovalyuk, Z. D.; Katerynchuk, V. M.; Савчук, A. Й.; Lytvyn, O. S.

doi:10.1016/j.spmi.2008.06.006

Cited by 15 publications

(9 citation statements)

References 4 publications

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“…Surface defects that are formed upon breaking chemical bonds between the atoms in GaSe as a result of this action contain metallic Ga. The oxidation of the imperfect GaSe VDW surfaces results in the formation of Ga 2 O 3 nanostructures [10,11]. The AFM topographic image (Fig.…”

Section: Resultsmentioning

confidence: 99%

Nanocomposite structures grown by inserting ionic salt RbNO3 into van der Waals gaps of III–VI compound layered semiconductors

et al. 2015

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Section: Resultsmentioning

confidence: 99%

Nanocomposite structures grown by inserting ionic salt RbNO3 into van der Waals gaps of III–VI compound layered semiconductors

et al. 2015

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“…In bulk form, GaSe is generally considered as a stable material and is known to have a high laser damage threshold suitable for non-linear optics applications 20,21 . Nonetheless, bulk GaSe is also known to naturally form a native oxide 22 and thermally-and photo-induced oxidation has been reported [23][24][25] . Recently, exposure to intense laser light was found to degrade optical properties and lead to chemical transformations [26][27][28] .…”

mentioning

confidence: 99%

Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy

Bergeron

Ibrahim

Leonelli

et al. 2017

Applied Physics Letters

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Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity conditions, the intensity of all Raman modes and the luminescence decrease rapidly with moderate exposure to above-gap illumination. Concurrently, several oxidation products appear in the Raman spectra: Ga 2 Se 3 , Ga 2 O 3 and amorphous and crystalline selenium. We find that no safe measurement power exists for optical measurements on ultrathin GaSe in ambient conditions. We demonstrate that the simultaneous presence of oxygen, humidity, and abovegap illumination is required to activate this photo-oxidation process, which is attributed to the transfer of photo-generated charge carriers towards aqueous oxygen at the sample surface, generating highly reactive superoxide anions that rapidly degrade the sample and quench the optical response of the material.

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“…The roughness of continuous β Ga 2 O 3 layers grown on the GaSe (0001) surface using such a tech nique did not exceed ~0.2 nm. We note that the surface roughness of β Ga 2 O 3 layers grown on n GaAs by electrochemical oxidation [22] or thermal oxidation of the GaSe(0001) surface in air at T a > 300°C [7] was several nm. The β Ga 2 O 3 compound is a defect n type semiconductor that has a monoclinic structure with the lattice parameters a = 12.23 Å, b = 3.04 Å, c = 5.8 Å, β = 103.7°.…”

Section: Surface Morphology Of Hybrid Nanostructuresmentioning

confidence: 84%

“…However, the surface chemical reactions that occur when GaSe is in contact with ferromagnetic metals (Fe [5], Ni [6]) limit the pos sibility of efficient spin injection in (ferromagnetic metal)/(semiconductor surface) hybrid structures fab ricated on the basis of this crystal. On a GaSe (0001) surface, thin (nanoscale) layers of Ga 2 O 3 thermal oxide [7] and natural oxide which is a mixture of Ga 2 O 3 and wide gap Ga and Se oxides can be grown [8,9]. On oxidized GaSe surfaces, In/GaO x /p GaSe [8] and ITO/Ga 2 O 3 /p GaSe [10] MOS structures have been formed.…”

Section: Introductionmentioning

confidence: 99%

Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

et al. 2012

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Features of the formation of Au/Ni/〈C〉/n Ga 2 O 3 hybrid nanostructures on a Van der Waals sur face (0001) of "layered semiconductor-ferroelectric" composite nanostructures (p GaSe〈KNO 3 〉) are stud ied using atomic force microscopy. The room temperature current-voltage characteristics and the depen dence of the impedance spectrum of hybrid structures on a bias voltage are studied. The current-voltage characteristic includes a resonance peak and a portion with negative differential resistance. The current attains a maximum at a certain bias voltage, when electric polarization switching in nanoscale three dimen sional inclusions in the layered GaSe matrix occurs. In the high frequency region (f > 10 6 Hz), inductive type impedance (a large negative capacitance of structures, ~10 6 F/mm 2 ) is detected. This effect is due to spin polarized electron transport in a series of interconnected semiconductor composite nanostructures with mul tiple p GaSe〈KNO 3 〉 quantum wells and a forward biased "ferromagnetic metal-semiconductor" polarizer (Au/Ni/〈C〉/n + Ga 2 O 3 /n Ga 2 O 3 ). A shift of the maximum (current hysteresis) is detected in the currentvoltage characteristics for various directions of the variations in bias voltage.

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Surface topology of GaSe oxidized crystals

Cited by 15 publications

References 4 publications

Nanocomposite structures grown by inserting ionic salt RbNO3 into van der Waals gaps of III–VI compound layered semiconductors

Nanocomposite structures grown by inserting ionic salt RbNO3 into van der Waals gaps of III–VI compound layered semiconductors

Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy

Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

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