Surface States Influence in Al Schottky Barrier of Ge Nanowires

Abstract

Aiming the understanding of how the application to devices is affected by the presence of oxygen in semiconductor nanostructures, Al/Ge-nanowires Schottky devices were fabricated without any previous treatment to remove the native oxide from nanowires' surface, originated during the growth process. Electronic transport properties of these devices were investigated and it was observed that interface states originated from the disordered oxide layer effectively pinned the Fermi level at the Ge surface, affecting Schottky barriers. Numerical calculations were made to complement this study agreeing with experiments.

Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping

“…The observed curve does not follow the simple thermal excitation law for a semiconductor, requiring a more detailed investigation to determine the dominant carrier transport process. Even when nanowires exhibit a crystalline core, any considerable degree of disorder can lead to the localized behavior of carriers, especially near the surfaces [13]. Surface states are well known sources of disorder, randomizing the electron potential inducing localized states at the surface.…”