The magnetotransport of freestanding, vacuum filtered, thin films of Mo 2 CT z , Mo 1.33 CT z , Mo 2 TiC 2 T z , and Mo 2 Ti 2 C 3 T z was measured in the 10-300-K temperature (T) range. Some of the films were annealed before measuring their transport properties. Analysis of the results suggest that-with the exception of the heavily defective Mo 1.33 CT z composition-in the 10-to 200-K temperature regime, variable range hopping between individual MXene sheets is the operative conduction mechanism. For Mo 1.33 CT z it is more likely that variable range hopping within individual flakes is rate limiting. At higher temperatures, a thermally activated process emerges in all cases. It follows that improved fabrication processes should lead to considerable improvements in the electrical transport of Mo-based MXenes.