2018
DOI: 10.1088/1361-6463/aac4cf
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Photocurrent enhancement and magnetoresistance in indium phosphide single nanowire by zinc doping

Abstract: We report the fabrication of intrinsic and Zn-doped InP single nanowire devices by the vapor-liquid-solid and photolithography techniques. Nanowires with a zincblend structure around 100 nm in radius and length at the micrometer scale were readily observed. Electrical measurements of samples containing single nanowires revealed Ohmic and Schottky behavior for the intrinsic and Zn-doped InP devices respectively. The Zn-doped InP device exhibited a thermal and optical dependence with high photosensitivity, whose… Show more

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Cited by 2 publications
(2 citation statements)
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“…In addition to the above methods, other traditional characterization techniques may be utilized for assessing the doping level of nanowires. For instance, optical methods, including photoluminescence, , photoconductivity, , and Raman spectroscopy, , have been used for dopant determination. Scanning probe methods, such as scanning tunneling microscopy, , Kelvin probe force microscopy, , and scanning photocurrent microscopy, can be used for quantitatively determining the doping profile at the surface of nanowires with a high spatial resolution.…”
Section: Synthesis Of Semiconductor Nanowires and Heterostructuresmentioning
confidence: 99%
“…In addition to the above methods, other traditional characterization techniques may be utilized for assessing the doping level of nanowires. For instance, optical methods, including photoluminescence, , photoconductivity, , and Raman spectroscopy, , have been used for dopant determination. Scanning probe methods, such as scanning tunneling microscopy, , Kelvin probe force microscopy, , and scanning photocurrent microscopy, can be used for quantitatively determining the doping profile at the surface of nanowires with a high spatial resolution.…”
Section: Synthesis Of Semiconductor Nanowires and Heterostructuresmentioning
confidence: 99%
“…Nanotailored devices have arisen as protagonists of a new generation of high efficiency sensitive systems with promising features to the industry of accurate sensors. 1 Nanowire-based technologies present the advantage of being produced on a high-yield scale exhibiting great sensitivity to light, 2 magnetic field 3 or even gases 4 depending on the material nature.…”
Section: Introductionmentioning
confidence: 99%