Surface state dependence of PbS and PbSe infrared noise and detectivity

Kouissa, S.; Djemel, A.; Aida, M.S.

doi:10.1007/s10854-012-0833-3

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…Low frequency noise is an important characteristic of PDs. In particular, the high level of low frequency noise hinders the improvement of infrared detectors such as PbS, PbSe и CdHgTe [5][6][7][8]. Noise analysis is also a well-known tool to characterize the material quality and device reliability [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Dyakonova¹,

Karandashev²,

Levinshteǐn³

et al. 2018

Semicond. Sci. Technol.

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We report the first experimental study of low-frequency noise in p-InAsSbP/n-InAs infrared photodiodes. For forward bias, experiments have been carried out at 300 and 77 K, in the photovoltaic regime the measurements have been done at 300 K. At room temperature the current noise spectral density, S I , exhibits the ∼1/f frequency dependence. For low currents, II 0 ∼4×10 −5 A, S I is proportional to I 2 , at higher currents this dependence changes to S I ∼I. At 77 K the noise spectral density is significantly higher than at 300 K, and Lorentzian contributions to noise are observed. The current dependences of spectral noise density can be approximately described as S I ∼I 1.5 and show particularities suggesting the contribution of defects.

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Section: Introductionmentioning

confidence: 99%

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Dyakonova¹,

Karandashev²,

Levinshteǐn³

et al. 2018

Semicond. Sci. Technol.

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“…In recent years the majority of low frequency noise (LFN) measurements were performed with HgCdTe [8][9][10][11] and PbS based detectors, including those using PbS colloidal quantum dots [12][13][14]. LFN in type-II InAs/GaSb superlattice PDs have also attracted considerable interest since they promise high background limited operation temperature [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes

Dyakonova

Karandashev

Levinshteǐn

et al. 2018

Semicond. Sci. Technol.

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We report the first experimental study of low-frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes at 300 K and 77 K. At room temperature, the current noise spectral density, S I , depends on frequency as 1/f over the entire current range and tends to the Nyquist noise when the frequency increases. At small reverse currents I rb 3×10 −5 A, S I is proportional to I ; rb 2 at higher currents this dependence changes to S I ∼I . rb 4 With temperature decrease down to 77 K, S I becomes proportional to I , rb 0.5 while the reverse current decreases and the differential resistance grows by 4 orders of magnitude. The noise was also studied in the photovoltaic mode at 100 K, where S I is proportional to I . ph 2We conclude that at 100 K, the Nyquist noise is dominant and can be used for estimations of the specific detectivity of P-InAsSbP/n-InAs diodes.

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