Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single-crystalline alloys as promising non-linear optical materials

Myronchuk, G.L.; Davydyuk, G. E.; Parasyuk, O.V.; Khyzhun, O.Y.; Andrievski, R.A.; Fedorchuk, A.O.; Danylchuk, S.P.; Піскач, Л. В.; Mozolyuk, M.Yu.

doi:10.1007/s10854-013-1285-0

Cited by 15 publications

(14 citation statements)

References 24 publications

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“…The Urbach energy and the steepness parameter increase with increasing temperature, as listed in Table 1. We suggest that this fact is related to recharging of defect centres because lower temperatures neutralize partially the charged centres and decrease their effect on the random modulation of electric field in a sample [33].…”

Section: Resultsmentioning

confidence: 91%

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Makhnovets¹,

Myronchuk²,

Піскач³

et al. 2018

Ukr. J. Phys. Opt.

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Abstract. We report the results of experimental studies for the optical absorption in TlGaSe 2 :Zn 2+ single crystals grown using a modified Bridgman-Stockbarger technique. The absorption measurements at different temperatures are performed with the steps 50 K. The analysis of the experimental data yield in the absorption coefficients of TlGaSe 2 :Zn varying from 20 to 800 cm -1 in the temperature region 100-300 K. Direct and indirect bandgap values for TlGaSe 2 :Zn 2+ are calculated as functions of temperature. These values are respectively equal to 2.22 and 2.04 eV at 100 K. It is revealed that the spectral dependences of the absorption coefficient in the region 60-130 cm -1 follow the Urbach rule, whereas the corresponding steepness parameter and the Urbach energy increase with increasing temperature.

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Section: Resultsmentioning

confidence: 91%

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Makhnovets¹,

Myronchuk²,

Піскач³

et al. 2018

Ukr. J. Phys. Opt.

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“…The monochromator resolution was 0.3 nm. The absorption coefficient was calculated similarly to the technique described in [20].…”

Section: Methodsmentioning

confidence: 99%

“…Interesting results were also obtained by us in the study of several TlC III X VI 2 -based systems. For instance, the TlInSe 2 -D IV Se 2 systems (D IV = Si, Ge, Sn) [17,18] exhibit larger solid solution ranges of TlInSe 2 , the enhanced transport, and better photoelectric and non-linear optical parameters [19][20][21][22]. The fundamental difference of the TlInSe 2 -D IV Se 2 systems with respect to many other chalcogenide crystals is the presence of heavy Tl ions which determine the high polarization of the compounds.…”

Section: Introductionmentioning

confidence: 99%

“…At the same time, laser radiation causes irreversible changes that do not exceed 0.3%. Comprehensive studies of photoconductivity, particularly for thallium-bearing compounds, along with calculations of band structure, have shown an essential role of intrinsic cationic defects in the observed effects [19][20][21][22] with energy levels within the forbidden energy gap.…”

Section: Introductionmentioning

confidence: 99%

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Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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Abstract:The studies of the laser operated third order nonlinear optical features of novel TlGaSn 2 Se 6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m 2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar + ions on the XPS spectra of the TlInSn 2 Se 6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn 2 Se 6 We have established that for the TlGaSn 2 Se 6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn 2 Se 6 crystal in advanced optoelectronic laser operated devices.

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“…Исследование данных кристаллов и твердых растворов на их основе в лите-ратуре представлено большим количеством публикаций. В частности, они проявляют высокую анизотропию свойств, высокую тензо-и фоточувствительность, радиа-ционную чувствительность, специфичность оптических и электрических свойств [1][2][3][4][5][6][7]. Среди электрических свойств можно отметить нелинейное и отрицательное сопротивление, S-образность вольт-амперных характе-ристик, а также эффект переключения и памяти [8,9].…”

Section: Introductionunclassified

О фотопроводимости TlInSe-=SUB=-2-=/SUB=-

Исмайлов¹,

Abilov²,

Гасанова³

2017

Физика И Техника Полупроводников

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Исследованы вольт-амперные, люксамперные характеристики и кинетика релаксации фотопроводимости монокристаллов TlInSe2. Наблюдаемые аномально большие времена релаксации, tau~103 c, и другие особенности фотопроводимости объясняются по барьерной теории неоднородных полупроводников. Определена высота дрейфового Edr~0.1 эВ и рекомбинационного Er~0.45 эВ барьеров. DOI: 10.21883/FTP.2017.05.44425.8182

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Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single-crystalline alloys as promising non-linear optical materials

Cited by 15 publications

References 24 publications

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Study of optical absorption in TlGaSe2:Zn2+ single crystals

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

О фотопроводимости TlInSe-=SUB=-2-=/SUB=-

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