Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Abstract

We report the first experimental study of low-frequency noise in p-InAsSbP/n-InAs infrared photodiodes. For forward bias, experiments have been carried out at 300 and 77 K, in the photovoltaic regime the measurements have been done at 300 K. At room temperature the current noise spectral density, S I , exhibits the ∼1/f frequency dependence. For low currents, II 0 ∼4×10 −5 A, S I is proportional to I 2 , at higher currents this dependence changes to S I ∼I. At 77 K the noise spectral density is significantly higher than at 300 K, and Lorentzian contributions to noise are observed. The current dependences of spectral noise density can be approximately described as S I ∼I 1.5 and show particularities suggesting the contribution of defects.

Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes

“…for both polarities. Such a consideration is justified, because at small currents, both forward and reverse, experimental I-V characteristics are well described by equation (1) (see [19]). In this case the values of noise spectral density in forward and inverse regimes should be practically identical and should have a quadratic dependence on current [22,23].…”

“…At larger currents, II 0 , both the S I (I) and the R d (I) dependences become different for forward and reverse bias. Under forward bias, the differential resistance R d decreases linearly as a function of current I fb , and the noise is proportional to current, S I I f b ~ [19]. Under reverse bias at I rb I 0 , the resistance R d strongly increases with current, while the noise increases as: S I .…”

“…LFN in type-II InAs/GaSb superlattice PDs have also attracted considerable interest since they promise high background limited operation temperature [15][16][17][18]. On the other hand, experimental study of LFN in InAs-based heterostructure PDs have been performed only in [19] focusing mainly on forward bias regime. The lack of comprehensive LFN studies restricts the application areas of these promising devices [11].…”

Phase-Change Materials, 1/f Noise, and Phase Synchrony

“…In which ε 1 is the characteristic energy for capture. Tis dependence can be explained through the multiphonon capture mechanism ( [41,42]; also sec. IV C. 2 of [1]).…”

Opto-Electronics Review

“…Remarkably, the noise appearance in biased low-resistance detectors causes a significant limitation of their detectivity at low frequencies. With generally known methods and lab equipment, measuring detector noise can be challenging compared to measuring floor noise [3][4][5][6][7].…”