1992
DOI: 10.1016/0167-5729(92)90009-z
|View full text |Cite
|
Sign up to set email alerts
|

Surface science aspects of etching reactions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

5
157
2
1

Year Published

1997
1997
2017
2017

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 477 publications
(168 citation statements)
references
References 224 publications
5
157
2
1
Order By: Relevance
“…The most obvious of these is F atom etching, which has been reported to produce both SiF 2 and SiF 4 as etch products [26]. Another possibility is an enhancement of SiF 2 scatter (and Si etching) by ion-induced sputtering.…”
Section: Sif 2 Surface Interactions In Sif 4 Plasmasmentioning
confidence: 99%
See 1 more Smart Citation
“…The most obvious of these is F atom etching, which has been reported to produce both SiF 2 and SiF 4 as etch products [26]. Another possibility is an enhancement of SiF 2 scatter (and Si etching) by ion-induced sputtering.…”
Section: Sif 2 Surface Interactions In Sif 4 Plasmasmentioning
confidence: 99%
“…In 100% SiF 4 plasmas, selective etching of Si over SiO 2 and Si 3 N 4 has been achieved [25]. Etching in these systems has been attributed to processes such as F-atom reactions with Si atoms, radical-surface reactions, and ion bombardment [26]. Adding a suitable diluent (e.g., O 2 or H 2 ), results in deposition of fluorinated silicon alloys [3].…”
Section: Fluorosilane Plasmasmentioning
confidence: 99%
“…So far, little attention has been paid to the interaction of the Si͑113͒ surface with halogens, which are well known to play a crucial role in wet-chemical etching reactions 12 and semiconductor processing as well as for template creation in subsequent surface functionalization with organics. With respect to chemical applications, the bulk-terminated Si͑113͒ surface exhibits two chemically different surface atoms per unit cell, i.e., one Si͑001͒-like atom with two dangling bonds and one Si͑111͒-like atom with a single unsaturated orbital.…”
Section: Introductionmentioning
confidence: 99%
“…Weak noticeable peaks at -0.8, -0.11, and 0.6 V and a sharp exponential rise in anodic current at 1.0 V were recorded. Observed such weak peaks may be revealed the occurrence of various surface processes [12,13]. At the above potential, it is supposed that the aniline monomer undergoes a deprotonation/ de-electronization reaction in this specified region as reported by Madhulika et al [14].…”
Section: Cyclic Voltammetrymentioning
confidence: 80%