Atomic structure of chlorinated Si(113) surfaces

Abstract

We present a detailed investigation of the adsorption of Cl on the Si͑113͒ surface based on x-ray standingwave experiments and density-functional theory calculations with additional characterization by low-energy electron diffraction and scanning tunneling microscopy. For the whole accessible range of Cl coverages, ͑2 ϫ n͒-like surface reconstructions are identified. Despite this apparent complexity, it is shown that these surface structures consist of only a few atomic adsorption geometries with the most prominent one being the Cl adsorption on top of a Si surface adatom. The required redistribution of Si concurs with a pronounced straightening and alignment of step edges along the ͓110͔ direction. Furthermore, it is argued that this adatom site plays a key role in step-edge geometries on vicinal Si͑111͒ and Si͑001͒ surfaces.

Ga and In adsorption on Si(112): Adsorption sites and superstructure

“…This combination has already been successfully applied to a variety of adsorbate systems on silicon surfaces. 25,[30][31][32][33] In the present case, this approach confirms the model by Snijders et al for Ga/Si(112), whereas the only available models for In/Si(112), which imply a 7×1 reconstruction, 18,23 can be ruled out, and a different model is suggested instead.…”

Study of H:Si(113)2&times;2 Structure by Scanning Tunneling Microscopy and <i>Ab Initio</i> Calculation

“…On the basis that the profile shape of the protrusions of the observed and the simulated images is moderately consistent, we conclude that Model C is favorable as the 2×2:H structure. The similar structural model of the 2×2 surface structure that is formed by the adsorption of chlorine atom on Si(113) surface is reported [33,34]. Considering the high chemical reactivity of hydrogen and chlorine atoms, it is appropriate that the similar atomic structures are formed.…”

“…At a high substrate temperature, the 2×n reconstructed structures tend to be formed by adsorption of metal atoms and molecules of gas [5][6][7][8][9][10][11][12][13][14][15]. This surface structure often leads to formation of one-dimensional structures: nanowires and nanodots [5][6][7][8][9][10][11][12].…”

“…In addition, one-dimensional structures called nanowires are formed as a result of the adsorption of metal atoms on a Si(113) surface [5][6][7][8][9][10][11][12][13]. Therefore, the Si(113) surface has also attracted increasing interest due to possible application as the substrate in nanostructure fabrication, and the adsorption structure of metal atoms and gas molecules on this surface has been studied [14][15][16]. To perform epitaxial growth on the Si surface, hydrogen atoms play an important role in removal of contamination and oxide layers on the surface, i.e., wet and dry cleaning [17,18].…”

Adsorbate-Mediated Growth of Rare-Earth Oxides on Silicon

“…Although the coherent fraction of the Si-O-Ce species, which represent the majority of the interfacial species, is more than tripled as compared to the recipe (5), a suggestion of a structural model would be speculative at best since at least a bimodal atomic distribution function would have to be considered to satisfactorily explain its (111) Fourier component. Nevertheless, our XSW results for both the SiO x and the Si-O-Ce interface species offer a suitable benchmark within a combined analysis using XSW and theoretical calculations, e. g., within the framework of density functional theory, 29,34 which could provide further insight into the complex chemistry at the REOxsilicon interface.…”