Surface Potential and Drain Current Analytical Model of Gate All Around Triple Metal TFET

Bagga, Navjeet; Dasgupta, S.

doi:10.1109/ted.2016.2642165

Cited by 70 publications

(22 citation statements)

References 33 publications

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“…As an important indicator, the cut-off frequency is used to evaluate the frequency characteristics of electronic devices. It can be obtained by the ratio of gm to C gg , and the specific calculation formula is shown in Equation (2) [32]. fT=gm2πCgs1+2Cgd/Cgs≈gm2πCgs+Cgd=gm2πCgg…”

Section: Discussion Of Simulation Resultsmentioning

confidence: 99%

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

et al. 2019

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A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits.

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Section: Discussion Of Simulation Resultsmentioning

confidence: 99%

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

et al. 2019

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“…The characteristic analysis and structure optimization of the gate dielectric material [13][14][15] and gate dielectrics with different dielectric constants have been performed [15][16][17][18][19][20]. In device physics, the analytical modeling of TFETs with the double-gate structure [21][22][23][24][25][26][27] and surrounding-gate structure [28][29][30][31][32][33] has also been extensively performed. One disadvantage of silicon-based TFETs compared to MOS-FETs is the smaller forward current, and the magnitude of the forward current is determined by the efficiency of the tunneling current generation.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Jin

Wang

et al. 2021

Nanoscale Res Lett

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A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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“…Analytical modeling finds its application in circuit simulators. Bagga et al provides an analytical model of drain current but does not include the ferroelectric material as gate stack in its gate all around triple metal TFET device. A combination of Maxwell's equation and pseudo 2‐D Poisson's equation develops an analytical model for FE‐TFETs .…”

Section: Introductionmentioning

confidence: 99%

“…A lower drain doping concentration increases the interband tunneling distance at channel-drain junction and thereby reduces the ambipolar current. To enhance the drive current, several methodologies have been suggested in the literature with high-k dielectric engineering, 14 L-shaped gate, 15 triple material double gate, 16 heterojunction, 17 hetero-dielectric, 18 junctionless, 19 and gate all around 20 TFETs. Luqi et al 21 reviewed the NCFETs and proposed to combine the NC effect with tunneling mechanism to further improve the SS.…”

Section: Introductionmentioning

confidence: 99%

Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

Mishra

Verma

Gupta

2020

Int J Numerical Modelling

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This paper presents an electrostatic potential–based analytical model of drain current for ferroelectric dual material gate all around tunnel field effect transistors (FE‐DMGAA‐TFETs). Analytical model is formulated to examine the device characteristics by combining the evanescent mode analysis (EMA) and Landau‐Khalatnikov equation. Ferroelectric material exhibits negative capacitance, which enhances the drain current by providing an amplification to the surface potential. The impact of varying the ferroelectric layer thickness on the device characteristics is studied. The accuracy of the model is evaluated by comparing it with the results obtained from numerical calculations and found to be in good accord. The ON current of the ferroelectric‐based TFETs is approximately 100 times the conventional DMGAA‐TFETs.

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Surface Potential and Drain Current Analytical Model of Gate All Around Triple Metal TFET

Cited by 70 publications

References 33 publications

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

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