Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon

Pi, Tun‐Wen; Hong, I.-H.; Cheng, Chao-Kai; Wertheim, G. K.

doi:10.1016/s0368-2048(00)00099-2

Cited by 59 publications

(18 citation statements)

References 15 publications

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“…Finite penetration is incorporated in our model by the insertion of a constant IMFP of l e ¼ 4 ( A in Eq. (1), which is consistent with the (approximately) constant value observed in the 20-50 eV energy range for Si(0 0 1) [20].…”

Section: Kinematic Simulation Of Si(0 0 1) Cbleed Patternssupporting

confidence: 90%

Kinematic simulation of convergent beam low-energy electron diffraction patterns

Ruben

Jesson

Paganin

et al. 2009

Optik

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Section: Kinematic Simulation Of Si(0 0 1) Cbleed Patternssupporting

confidence: 90%

Kinematic simulation of convergent beam low-energy electron diffraction patterns

Ruben

Jesson

Paganin

et al. 2009

Optik

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“…Therefore, analyzing a given Si NW sample at different incident angles gave almost the same peak spectrum. The XPS data from both Si NW and 2D Si(100) are collected from 2.5-3 λ Si (where λ Si ) 3.2-3.6 Å stands for the electron escape depth), 54,55 namely, 8-11 Å from the surface. Therefore, the comparison between these two samples is rational.…”

Section: Methodsmentioning

confidence: 99%

Covalent Attachment of Alkyl Functionality to 50 nm Silicon Nanowires through a Chlorination/Alkylation Process

et al. 2009

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For many applications, the presence of oxide on Si nanowires (Si NWs) is undesirable because of the difficulty in controlling the SiO 2 /Si interface properties. Here, we report on the functionalization of 50 nm (in diameter) Si NWs with alkyl chains using a versatile two step chlorination/alkylation process, while preserving the original length and diameter of the NWs. We show that Si NWs terminated with C 1 -C 10 molecules, through Si-C bonds, connect alkyl molecules to 50-100% of the Si atop sites and provide surface stability that depends on the chain length and molecular coverage. These observation were explained by noting that the longer the alkyl chain the higher the concentration of molecule-free pinholes on the Si NW surfaces and, therefore, the easier the oxidation process. Our results provide evidence that alkyl-Si NWs provide stronger Si-C bonds and higher surface stability in ambient conditions than equivalent two-dimensional (2D) Si surfaces having similar or higher initial coverage. The kinetic mechanism of the alkylation process of Si NW surfaces, the oxidation resistance of the modified structures, and the differences from 2D surfaces are discussed in the article.

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“…The most important advantage of UPS is high surface sensitivity. The maximum kinetic energy of electrons in this measurement is 40.8 eV, which corresponds to the mean free path of electrons less than 1 nm [33]. This indicates that the UPS can only measure the DOS of the surface of the sample.…”

Section: Resultsmentioning

confidence: 99%

Observation of Quantum Size Effect from Silicon Nanowall

et al. 2016

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We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed a stepwise shape which is completely different from that of the bulk Si. Theoretical analysis clearly demonstrated that this change of the DOS shape was due to the quantum size effect.

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Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon

Cited by 59 publications

References 15 publications

Kinematic simulation of convergent beam low-energy electron diffraction patterns

Kinematic simulation of convergent beam low-energy electron diffraction patterns

Covalent Attachment of Alkyl Functionality to 50 nm Silicon Nanowires through a Chlorination/Alkylation Process

Observation of Quantum Size Effect from Silicon Nanowall

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