Observation of Quantum Size Effect from Silicon Nanowall

Kanematsu, Daiji; Yoshiba, Shuhei; Hirai, M.; Terakawa, Akira; Tanaka, Makoto; Ichikawa, Yukimi; Miyajima, Shinsuke; Konagai, Makoto

doi:10.1186/s11671-016-1743-8

Cited by 6 publications

(6 citation statements)

References 33 publications

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“…Silicon (Si) nanostructures are the focus of extensive research activities seeking to circumvent the fundamental limitation set by the indirect bandgap of Si that hinders many potential applications, particularly in optoelectronics. A variety of Si nanostructures, such as porous Si, nanowalls, nanoholes, and nanowires (NWs) have achieved quantum confinement and increased optical absorption in Si [1,2,3,4]. The significant developments in Si nanostructuring demonstrated in recent years also indicate a gradual shift of focus from nanosize-related (quantum confinement) phenomena to surface/interface-related effects, including a variety of interactions with adsorbents, impurities, defects, etc.…”

Section: Introductionmentioning

confidence: 99%

Surface Effects and Optical Properties of Self-Assembled Nanostructured a-Si:Al

et al. 2019

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We present a study of the surface effects and optical properties of the self-assembled nanostructures comprised of vertically aligned 5 nm-diameter Al nanowires embedded in an amorphous Si matrix (a-Si:Al). The controlled (partial) removal of Al nanowires in a selective etching process yielded nanoporous a-Si media with a variable effective surface area. Different spectroscopy techniques, such as X-ray photoelectron spectroscopy (XPS), UV-Vis spectrophotometry and photoluminescence (PL), have been combined to investigate the impact of such nanostructuring on optical absorption and emission properties. We also examine long-term exposure to air ambient and show that increasing level of surface oxidation determines the oxide defect-related nature of the dominant PL emission from the nanoporous structures. The role of bulk, nanosize and surface effects in optical properties has been separated and quantified, providing a better understanding of the potential of such nanoporous a-Si:Al structures for future device developments.

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Section: Introductionmentioning

confidence: 99%

Surface Effects and Optical Properties of Self-Assembled Nanostructured a-Si:Al

et al. 2019

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“…As shown in Figure 14, this measured result agrees very well with a simulation described by Kanematsu et al in detail; the cross-sectional shape obtained from the TEM image was used in the simulation. 18 This indicates that the simulation is a useful tool, and the pitch and the height can be designed by the simulation to optimize for solar cells.…”

Section: Discussionmentioning

confidence: 99%

Fabrication of Two-Dimensional Quantum Well Structure Consisting of Vertical Si Nano-Wall Arrays

Ichikawa

Yoshiba²,

Hirai³

et al. 2017

J. Electrochem. Soc.

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Fabrication process technologies for Si nano-wall arrays were developed to provide samples that enable us to study the bandgap widening by the quantum confinement effect of a two-dimensional Si /SiO 2 quantum well. We studied dry etching based and anisotropic wet etching (AWE) based processes for making the nano-wall structure, and demonstrate that the AWE with KOH was applicable to the nano-wall fabrication. The obtained Si nano-walls embedded in SiO 2 had vertical flat sidewalls at the interface, and 1.5 nm-wide Si walls with height of 1 to 2 μm was formed. We expect that the bandgap widening is demonstrated by these samples. The optical reflectance of the nano-wall arrays were measured in the wavelength range of 400 nm−1000 nm, and the measured results showed that the reflectance was small as compared with that of the flat bare wafer.

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“…The specific resistance of silicon is almost independent of its thickness. Because in silicon, the quantum size effect occurs mainly at sizes less than 20 nm [48]. However, ZnO and CH 3 NH 3 PbI 3 have a quantum size effect at larger sizes.…”

Section: Impact Of Emitter Layer Thickness On Fill Factormentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

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Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH 3 NH 3 PbI 3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH 3 NH 3 PbI 3 /p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20-200 nm of emitter layer thickness. It has been found that the short circuit current for CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20-100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH 3 NH 3 PbI 3 /p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm 2 and 0.77 for n-CH 3 NH 3 PbI 3 /p-Si and 18.06 mA/cm 2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

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Observation of Quantum Size Effect from Silicon Nanowall

Cited by 6 publications

References 33 publications

Surface Effects and Optical Properties of Self-Assembled Nanostructured a-Si:Al

Surface Effects and Optical Properties of Self-Assembled Nanostructured a-Si:Al

Fabrication of Two-Dimensional Quantum Well Structure Consisting of Vertical Si Nano-Wall Arrays

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

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