2009
DOI: 10.1021/jp905394w
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Covalent Attachment of Alkyl Functionality to 50 nm Silicon Nanowires through a Chlorination/Alkylation Process

Abstract: For many applications, the presence of oxide on Si nanowires (Si NWs) is undesirable because of the difficulty in controlling the SiO 2 /Si interface properties. Here, we report on the functionalization of 50 nm (in diameter) Si NWs with alkyl chains using a versatile two step chlorination/alkylation process, while preserving the original length and diameter of the NWs. We show that Si NWs terminated with C 1 -C 10 molecules, through Si-C bonds, connect alkyl molecules to 50-100% of the Si atop sites and provi… Show more

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Cited by 61 publications
(98 citation statements)
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“…The high sensitivity, low-power consumption, fast-response times, and the compatibility with conventional silicon technology and readout circuitry, have the potential to get SiNW FETs to give us simple signal transductions of disease breathprints, as well as being amenable to miniaturization and scalability. [45][46][47][48][49][50] Results and Discussion…”
Section: Analysis Of the Clinical Samples Showed That The Optimized Smentioning
confidence: 99%
“…The high sensitivity, low-power consumption, fast-response times, and the compatibility with conventional silicon technology and readout circuitry, have the potential to get SiNW FETs to give us simple signal transductions of disease breathprints, as well as being amenable to miniaturization and scalability. [45][46][47][48][49][50] Results and Discussion…”
Section: Analysis Of the Clinical Samples Showed That The Optimized Smentioning
confidence: 99%
“…[35][36][37][38] The attachment of alkyl chains has been demonstrated on Cl-terminated surfaces using Grignard reagents. This chlorination/ alkylation route has been effective for functionalizing both bulk 39,40 and nanowire 41,42 surfaces of Si and Ge. Ge surfaces passivated with alkyl chains show far greater stability compared to hydrogen or halogenated (Cl/Br/I) surfaces due to the strong Ge-C bond (460 kJ mol -1 ) and the presence of a hydrophobic monolayer hindering the access of oxidizing species toward the Ge surface.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, Bashouti and co-workers applied a 2-step chlorination-alkylation method to Si NWs. [26] Although this approach leads to less surface oxidation and more densely packed monolayers, it required rather harsh preparation conditions. Finally, the attachment of 1-alkenes onto Si surfaces under UV light is another popular method for Si surface functionalization, [27,28] which is much milder again, but also provides only an intermediate electrical passivation.…”
Section: Introductionmentioning
confidence: 99%