Surface passivation of crystalline silicon by intrinsic a-Si:H films deposited in remote low frequency inductively coupled plasma

Guo, Yukun; Ong, T.M.; Xu, Shuyan

doi:10.1016/j.apsusc.2019.05.063

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…In conclusion, the charge recombination behavior in the system is influenced not only by the c-Si charge carrier type but also by the charge carrier type in a-Si:H. Thus, doping inhibits charge recombination in materials. Furthermore, although a-Si:H contributes mainly to defect passivation − and carrier-selective transporting, , the charge separation and transfer are significantly affected.…”

Section: Resultsmentioning

confidence: 99%

“…It is widely believed that a-Si:H plays an important role in passivating Si surface defects, − reducing electron–hole pair recombination, and selectively transporting photogenerated carriers by doping. , Indeed, numerous publications have demonstrated that changes in hydrogen concentration ( C H ) have a direct impact on the structural, electronic, and optical properties of a-Si:H. − Thus, modulating the C H in a-Si:H for SHJ is an efficient approach to improve the defect passivation of the Si surface . By varying the H dilution ratio in rear-emitter SHJ solar cells, Wu et al discovered that the higher valence band offset due to high C H triggers a decrease in filling factor, while lower C H gives high interface defect densities, and a moderate H dilution ratio only shows excellent passivation quality and reasonable energy band alignment.…”

Section: Introductionmentioning

confidence: 99%

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Photoinduced Charge Behavior in a-Si:H/c-Si Heterojunction: Quantum Dynamics Simulation with Vibronic Coupling

Matsumoto

2023

J. Phys. Chem. C

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Excellent charge carrier behavior in hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) is crucial for achieving the high efficiency and stability of Si heterojunction solar cells. In this work, we employ the real-time time-dependent density functional based tight binding (TD-DFTB) approach with the Ehrenfest dynamic method to investigate how vibronic coupling affects the photoinduced charge behavior in a-Si:H/c-Si. The variation in hydrogen concentration demonstrates the diversity of intermaterial charge transfer. The hydrogen directly leads to structural differences and thus indirectly affects charge separation and transfer, emphasizing the importance of hydrogen in the charge transfer process. Doping c-Si with aluminum or phosphorus improves the intermaterial charge separation transfer and, to some extent, suppresses charge carrier recombination. Furthermore, lattice vibration mode analysis shows that, while a-Si:H primarily contributes to defect passivation and carrier-selective transporting, the charge separation and transfer are also significantly affected. The intense phonon vibration modes indicate the presence of a nonradiative recombination mechanism, which results in the gradual energy fading.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoinduced Charge Behavior in a-Si:H/c-Si Heterojunction: Quantum Dynamics Simulation with Vibronic Coupling

Matsumoto

2023

J. Phys. Chem. C

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Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Wang

Liu

et al. 2021

Physica Rapid Research Ltrs

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A novel method of preparing ultrathin aluminum oxide films by rapid thermal annealing (RTA) treatment for effective silicon surface passivation is proposed. The high‐temperature RTA processing (750–825 °C) for tens of seconds in an oxygen atmosphere completely converts the thermally evaporated aluminum metal nanofilms (1–5 nm) on crystalline silicon to aluminum oxide (Al2O3) films, with a thin SiOx layer formed at the interface between the silicon and the Al2O3. The generated Al2O3 film can provide superior passivation quality for the silicon surface, even better than that obtained by the thermal atomic layer deposition technique. Moreover, the growth kinetics of the Al2O3 passivating film indicates that it is a diffusion‐controlled activation process, with an energy barrier of 3.3 eV for aluminum ions diffusing across the metal/oxide interface.

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Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Liu

Wang

et al. 2021

Materials Science in Semiconductor Processing

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Surface passivation of crystalline silicon by intrinsic a-Si:H films deposited in remote low frequency inductively coupled plasma

Cited by 4 publications

References 32 publications

Photoinduced Charge Behavior in a-Si:H/c-Si Heterojunction: Quantum Dynamics Simulation with Vibronic Coupling

Photoinduced Charge Behavior in a-Si:H/c-Si Heterojunction: Quantum Dynamics Simulation with Vibronic Coupling

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

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