Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Liu, Can; Xu, Shilong; Wang, Peng; Ge, Xiaoyu; Han, Bingquan; Zhang, Yizhe; Wang, Minghua; Wu, Xiaoping; Xu, Lingbo; Lin, Ping; Huang, Xiaorong; Yu, Xuegong

doi:10.1016/j.mssp.2021.105920

Cited by 10 publications

(4 citation statements)

References 38 publications

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“…Annealing in FGA also increased the implied V oc (i-V oc ) from 583 to 603 mV. However, the authors recognize that other papers have demonstrated that annealing in O 2 leads to better passivation [92]. Davis and Strandwitz also notes that annealing in O 2 has been shown to yield more oxidizing MoO x , and hence a higher work function from a greater extent of band bending [91].…”

Section: Molybdenum Oxidementioning

confidence: 89%

“…Davis and Strandwitz, in their characterization of MoO x films, found that MoO x , when deposited at 300 • C, had the structure of α-MoO x [91]. Another study found that annealing at 150 • C gives the best passivation; at this temperature and 200 • C, the MoO x film is amorphous, but when annealing temperature is increased to 250 • C, the MoO x film becomes crystalline with the orthorhombic structure [92]. The study similarly posits that the crystallinity may be the most important reason for why passivation quality degrades at higher temperatures.…”

Section: Molybdenum Oxidementioning

confidence: 99%

“…The additional oxygen vacancies reduced the MoO x work function, and increased series resistance, resulting in lower V oc (695 mV for glove-box stored vs. 650 mV for air-exposed), J sc (38.88 vs. 38.7 mA/cm 2 ), FF (74% vs. 69%), and efficiency (20.0% vs. 17.35%) [87]. Also, Jun Chen et al observed that the effective minority carrier lifetime of their MoO x films decreased from 180.2 to 59.6 µs after being left in an ambient environment of around 30% humidity for 48 h, showing that the passivation quality of MoO x drops significantly as well if it is exposed to air for a prolonged period of time [92]. To improve the stability of MoO x /Si solar cells, Cao et al suggest using SiO x and V 2 O x in a Si/SiO x /MoO x /V 2 O x /ITO/Ag cell structure.…”

Section: Molybdenum Oxidementioning

confidence: 99%

See 2 more Smart Citations

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Wong

Pei

2022

Photonics

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Carrier-selective passivating contacts for effective electron and hole extraction are crucial to the attainment of high efficiency in crystalline silicon (Si) solar cells. In this comprehensive review, the principle of carrier extraction and recombination mechanisms in conventional industrial Si solar cells are discussed first. Passivating contacts based on (i) amorphous hydrogenated Si and (ii) polysilicon/silicon oxide are next reviewed, with emphasis on carrier selectivity mechanisms including contact layer band alignment with silicon, and localized carrier transport in ultrathin oxides. More recent developments in dopant-free passivating contacts deposited by lower-cost fabrication processes with lower thermal budget are then described. This third category of non-Si based electron- and hole-selective passivating contacts include transition metal oxides, alkali/alkali earth metal fluorides and organic conjugated polymers. The photovoltaic performance of asymmetric double heterojunction Si solar cells fabricated using these non-Si passivating contacts and their stability in damp heat conditions are discussed and compared with Si based passivating contacts.

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Section: Molybdenum Oxidementioning

confidence: 89%

Section: Molybdenum Oxidementioning

confidence: 99%

Section: Molybdenum Oxidementioning

confidence: 99%

See 1 more Smart Citation

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Wong

Pei

2022

Photonics

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“…On the other hand, high temperatures provide the phase change energy for the crystallization of the film. The β-MoO x phase initially present undergoes gradual crystallization to form the α-MoO x phase [126][127][128]. Compared with β-MoOx, α-MoO x causes a higher degree of lattice distortion on the silicon surface, which results in a higher surface density, indicating poor interface passivation [129].…”

Section: Field-effect Passivationmentioning

confidence: 99%

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

Shi

Guan

et al. 2023

Materials

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Silicon heterojunction (SHJ) solar cells are increasingly attracting attention due to their low-temperature processing, lean steps, significant temperature coefficient, and their high bifacial capability. The high efficiency and thin wafer nature of SHJ solar cells make them ideal for use as high-efficiency solar cells. However, the complicated nature of the passivation layer and prior cleaning render a well-passivated surface difficult to achieve. In this study, developments and the classification of surface defect removal and passivation technologies are explored. Further, surface cleaning and passivation technologies of high-efficiency SHJ solar cells within the last five years are reviewed and summarized.

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Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Li,

Kang,

Wang

et al. 2023

Adv Funct Materials

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In crystalline silicon (c‐Si) solar cells, the hole transport layer (HTL) made of high oxygen content MoOx (x > 2.85, H‐MoOx) evaporating from molybdenum trioxide is not ideal due to low optical bandgap and interface reaction effects. This limits the power conversion efficiency (PCE) and stability of c‐Si solar cells. To improve this, low oxygen content MoOx (x < 2.85, L‐MoOx) with a wide bandgap of 3.87 eV, deposited using molybdenum dioxide (MoO2), is explored and implemented. The c‐Si/SiOx (FGA, forming gas annealing)/L‐MoOx heterojunction has a low contact resistivity of ≈15.06 mΩ cm2, which is almost one order of magnitude lower than that of c‐Si/SiOx(FGA)/H‐MoOx heterojunction. Using L‐MoOx as the HTL, a c‐Si solar cell based on the SiOx passivation layer shows a fill factor of 84.38% and PCE of 21.75%, representing the highest efficiency for MoOx‐based p‐type c‐Si solar cells. Scanning transmission electron microscopy results show that the L‐MoOx HTL effectively enhances the stability of c‐Si solar cells when exposed to air by reducing Ag and Si element diffusion into MoOx. This successful preparation of efficient and stable MoOx HTL films, while preserving their field‐effect passivation ability, provides valuable insights into the development of high‐performance HTL.

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Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Cited by 10 publications

References 38 publications

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

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Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Cited by 10 publications

References 38 publications

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Double Heterojunction Crystalline Silicon Solar Cells: From Doped Silicon to Dopant-Free Passivating Contacts

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

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Product

Resources

About

Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency