Surface modification of piezoelectric aluminum nitride with functionalizable organosilane adlayers

Chan, Edmund; Jackson, Nathan; Mathewson, A.; Galvin, Paul; Dow, Ali B. Alamin; Kherani, Nazir P.; Blaszykowski, Christophe; Thompson, Michael

doi:10.1016/j.apsusc.2013.06.039

Cited by 9 publications

(6 citation statements)

References 36 publications

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“…The BTS cross-linking molecule possesses a highly reactive trichlorosilyl tail function, for strong siloxane attachment onto the quartz substrates. The distal benzenethiosulfonate head function readily and regioselectively reacts with thiols to form disulfide bridges (Chan et al, 2013;Sheikh Fig. 3.…”

Section: Sensor Surface Preparationmentioning

confidence: 99%

“…et al, 2010). BTS has recently been used as a surface modifier on both medical grade stainless steel and aluminum nitride to facilitate the functionalization of those surfaces with thiol-containing probes Chan et al, 2013). The tmMN4 aptamer was next concurrently immobilized with MCH spacer molecule onto BTS-modified surfaces, at a 1:1 M ratio in the immobilization solution.…”

Section: Sensor Surface Preparationmentioning

confidence: 99%

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Ultra-high frequency piezoelectric aptasensor for the label-free detection of cocaine

Neves

Blaszykowski²,

Bokhari

et al. 2015

Biosensors and Bioelectronics

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Section: Sensor Surface Preparationmentioning

confidence: 99%

Section: Sensor Surface Preparationmentioning

confidence: 99%

Ultra-high frequency piezoelectric aptasensor for the label-free detection of cocaine

Neves

Blaszykowski²,

Bokhari

et al. 2015

Biosensors and Bioelectronics

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“…It is likely that this was caused by a reduced population of –OH groups available for silanization. Unlike the case for silica, more severe oxygenation may be required for the other two materials [ 36 ].…”

Section: Final Remarksmentioning

confidence: 99%

“…These surface modifications were also extended to aluminum nitride (AlN surfaces), which is another material used in acoustic wave devices [ 36 ], and to Si 3 N 4 , which is a material used in cantilever devices where antifouling is also crucial [ 37 ]. The antifouling ability of layers on these devices was not evaluated in the present work.…”

Section: Introductionmentioning

confidence: 99%

Assembling Surface Linker Chemistry with Minimization of Non-Specific Adsorption on Biosensor Materials

2021

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The operation of biosensors requires surfaces that are both highly specific towards the target analyte and that are minimally subject to fouling by species present in a biological fluid. In this work, we further examined the thiosulfonate-based linker in order to construct robust and durable self-assembling monolayers (SAMs) onto hydroxylated surfaces such as silica. These SAMs are capable of the chemoselective immobilization of thiol-containing probes (for analytes) under aqueous conditions in a single, straightforward, reliable, and coupling-free manner. The efficacy of the method was assessed through implementation as a biosensing interface for an ultra-high frequency acoustic wave device dedicated to the detection of avidin via attached biotin. Fouling was assessed via introduction of interfering bovine serum albumin (BSA), IgG antibody, or goat serum. Improvements were investigated systematically through the incorporation of an oligoethylene glycol backbone employed together with a self-assembling diluent without a functional distal group. This work demonstrates that the incorporation of a diluent of relatively short length is crucial for the reduction of fouling. Included in this work is a comparison of the surface attachment of the linker to Si3N4 and AlN, both materials used in sensor technology.

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“…To this end, there is a great interest in the development of semiconductor materials for these applications . Both field‐effect transistor and electro‐acoustic sensor schemes have been heavily investigated as platforms for semiconductor biosensors. While silicon has been and continues to be extensively investigated for these applications, compound semiconductors – specifically the group II–VI and III–V materials – have incurred additional interest over the past decade through the demonstration of promising biocompatibility and general potential for successfully interfacing with complex biosystems .…”

Section: Introductionmentioning

confidence: 99%

Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

Bain

Ivanisevic

2014

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Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

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Surface modification of piezoelectric aluminum nitride with functionalizable organosilane adlayers

Cited by 9 publications

References 36 publications

Ultra-high frequency piezoelectric aptasensor for the label-free detection of cocaine

Ultra-high frequency piezoelectric aptasensor for the label-free detection of cocaine

Assembling Surface Linker Chemistry with Minimization of Non-Specific Adsorption on Biosensor Materials

Engineering the Cell-Semiconductor Interface: A Materials Modification Approach using II-VI and III-V Semiconductor Materials

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