Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition

Hiruma, Kenji; Haga, Takuma; Miyazaki, Masaru

doi:10.1016/0022-0248(90)90836-a

Cited by 49 publications

(18 citation statements)

References 14 publications

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“…Flatness of the growth plane at the mask edge therefore degrades when aluminum content is higher (aluminum composition: 0.48). Similar results concerning the growth plane at the mask edge were obtained for GaAs/AlGaAs selective growth [14,15]. Fig.…”

Section: Article In Presssupporting

confidence: 85%

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Shimizu

Shirai

Aoki

2005

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 85%

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Shimizu

Shirai

Aoki

2005

Journal of Crystal Growth

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“…10 This figure also plots the surface migration length of GaAs on SiO 2 from Ref. 19. Clearly, the surface migration length of GaAs on SiO 2 is for all temperatures much larger than the pitch of the nanostructured islands (500 nm) so the growth species has an adequate migration length for selective growth as indicated in Fig.…”

Section: Methodsmentioning

confidence: 94%

Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

Zubía

Zhang

Bommena

et al. 2001

Journal of Elec Materi

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“…The higher lateral growth mode on the side (-110) facet of the AlGaAs NW could also be explained by a stronger bonding between Al and As atoms than that between Ga and As atoms in GaAs growth [25]. Another study describes that Al reacts with SiO 2 more than Ga does and the migration length of Al atoms (and growth species bonded with Al) was shorter than Ga [26]. Both reports state that the diffusion (migration) length becomes shorter as the temperature is lowered.…”

Section: Algaas Nanowirementioning

confidence: 96%

Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires

Hayashida

Sato

Hara

et al. 2010

Journal of Crystal Growth

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We developed a growth method for forming a GaAs quantum well contained in an AlGaAs/GaAs heterostructure nanowire by using selective-area metal organic vapor phase epitaxy. To find the optimum growth condition of AlGaAs nanowires, we changed the growth temperature between 800 and 850 o C and found that best uniformity of the shape and the size was obtained near 800 o C but lateral growth of AlGaAs became larger, which resulted in a wide GaAs quantum well grown on the top (111)B facet of the AlGaAs nanowire. To form the GaAs quantum well with a reduced lateral size atop the AlGaAs nanowire, a GaAs core nanowire about 100 nm in diameter was grown before the AlGaAs growth, which reduced the lateral size of AlGaAs to roughly half compared with that without the GaAs core. Photoluminescence measurement at 4.2 K indicated spectral peaks of the GaAs quantum wells about 60 meV higher than the acceptor-related recombination emission peak of GaAs near 1.5 eV. The photoluminescence peak energy showed a blue shift of about 15 meV, from 1.546 to 1.560 eV, as the growth time of the GaAs quantum well was decreased from 8 to 3 sec. Transmission electron microscopy and energy dispersive X-ray analysis of an AlGaAs/GaAs heterostructure nanowire indicated a GaAs quantum well with a 4 thickness of 5-20 nm buried along the <111> direction between the AlGaAs shells, showing a successful fabrication of the GaAs quantum well.5

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Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition

Cited by 49 publications

References 14 publications

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires

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