InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Shimizu, Jiro; Shirai, Makoto; Aoki, Masahiro

doi:10.1016/j.jcrysgro.2004.12.110

Cited by 39 publications

(21 citation statements)

References 13 publications

(19 reference statements)

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“…This implies that in our growth conditions, aluminum has a shorter diffusion length than gallium. This is in contradiction with previous reports of a longer diffusion length for Al precursor than for Ga and In ones [4,11]. Fitting the experimental thickness profiles for InP, GaAs (Fig.…”

Section: Resultscontrasting

confidence: 99%

Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Décobert

Dupuis

Lagrée

et al. 2007

Journal of Crystal Growth

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Section: Resultscontrasting

confidence: 99%

Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Décobert

Dupuis

Lagrée

et al. 2007

Journal of Crystal Growth

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“…As shown in Figure 3j, the indium content increases along the growth direction due to the higher rate of indium incorporation, since it has a much longer surface diffusion length than that of the Ga adatom. 13,14 Moreover, since the dissociation rate of indium is proportional to the growth temperature, the upper QWs, which have a slightly lower surface temperature, can contain more indium than the lower QWs. Therefore, the upper QWs can have a higher indium content than the lower QWs.…”

mentioning

confidence: 99%

Nonlinear Photonic Diode Behavior in Energy-Graded Core–Shell Quantum Well Semiconductor Rod

Gong

Cho

2014

Nano Lett.

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Future technologies require faster data transfer and processing with lower loss. A photonic diode could be an attractive alternative to the present Si-based electronic diode for rapid optical signal processing and communication. Here, we report highly asymmetric photonic diode behavior with low scattering loss, from tapered core-shell quantum well semiconductor rods that were fabricated to have a large gradient in their bandgap energy along their growth direction. Local laser illumination of the core-shell quantum well rods yielded a huge contrast in light output intensities from opposite ends of the rod.

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“…The GaAsSb growth is considered to mainly proceed by the diffusion of Ga species from the mask region and migration on the sidewalls of InAs NWs. Since Ga atoms have a shorter migration length than that of In atoms, the temperature of 430 °C is probably too low to provide sufficient kinetic energy to the Ga species. The tapered sidewall formed as a result.…”

Section: Resultsmentioning

confidence: 99%

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

Kawaguchi

Takahashi

Okamoto

et al. 2018

Physica Status Solidi (a)

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Position-controlled vapor-liquid-solid (VLS) growth of nanowires (NWs)is investigated using GaAs substrates with SiN-patterned masks and Au catalysts for the realization of axial GaAsSb/InAs heterostructures. Rod-like InAs NWs are obtained by the introduction of a small amount of HCl gas. The InAs NW diameter depends on the Au catalyst size and pitch of NWs, which can be explained by the VLS growth accompanied by lateral growth. A peculiar change in NW shapes for additive HCl gas is also revealed. Moreover, the formation of axial GaAsSb/InAs heterostructure NWs, by controlling the growth temperature of GaAsSb segments is demonstrated. These results indicate that this growth method is promising for the development of NWs suitable for vertical nano-scale devices with Sb-containing heterostructures. Experimental SectionPatterned substrates were fabricated using EB lithography and a lift-off process. First, a 50-nm-thick SiN film was deposited on a GaAs(111)B substrate. EB resist was then coated on the SiN surface, and two-dimensionally arrayed circular holes with diameters of 40-80 nm were developed on the resist using EB

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InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Cited by 39 publications

References 13 publications

Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Nonlinear Photonic Diode Behavior in Energy-Graded Core–Shell Quantum Well Semiconductor Rod

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

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