Surface films on HgCdTe and CdTe etched in ferricyanide solution

Erné, Ben H.; Lefèvre, Frank; Lorans, D.; Ballutaud, D.; Debiemme‐Chouvy, Catherine; Vigneron, Jackie; Etchéberry, Arnaud

doi:10.1016/s0169-4332(01)00125-8

Cited by 9 publications

(10 citation statements)

References 10 publications

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“…Pore diameter, depth, roughness or branching can therefore be efficiently tailored according to the electrolyte properties. Similarly to aqueous media, it is thus possible to grow, in organic solvents, meso-and macropores [45] Cd 1Àx Zn x Te H 2 SO 4 [163] onto both p-and n-Si under illumination or not. Similarly to Si, porous Ge [167] has also been grown in Cl À containing ''organic'' solutions (AlCl 3 or HCl in DMSO or DMF) but water was always present in the solutions.…”

Section: Non-aqueous Electrolytesmentioning

confidence: 99%

Electrochemical pore formation onto semiconductor surfaces

Santinacci¹,

Djenizian²

2008

Comptes Rendus. Chimie

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Section: Non-aqueous Electrolytesmentioning

confidence: 99%

Electrochemical pore formation onto semiconductor surfaces

Santinacci¹,

Djenizian²

2008

Comptes Rendus. Chimie

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“…The effect of photoetching on photoluminescence (PL) of n-CdSe was studied many years ago [6], but the authors claimed the formation of etch pits rather than pores. Formation of porous network which extends more than 100 µm below the initial surface was recently reported in p-Cd 1−x Zn x Te by Erné et al [7,8]. Besides, Zenia et al subjected p-ZnTe crystals to electrochemical etching and observed the formation of needle-like structures exhibiting a blueshift of the excitonic transition energies [9].…”

mentioning

confidence: 82%

Porosity-induced gain of luminescence in CdSe

Monaico

Ursaki

Urbieta

et al. 2004

Semicond. Sci. Technol.

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Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network.

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“…The use of aniline to treat CdTe is successful as its oxidation results in the formation of either unreactive polyaniline or complete mineralization to CO 2 . The less toxic potassium ferrocyanide, K 4 Fe(CN) 6 , which meets most of the above criteria, was tested as a possible substitute and was found to exhibit activity towards CdTe under illumination. As with aniline, no reaction was observed in the dark.…”

Section: F823mentioning

confidence: 99%

“…As with aniline, no reaction was observed in the dark. However, the product of oxidation, Fe(CN) 6 3-(aq), reacts with CdTe and Te to produce surface oxides of these species [6], which are deleterious to back contact formation and performance. Figure 4 shows plots of the J-V parameters of devices which received aniline treatments over various times with illumination directly on the CdTe layer.…”

Section: F823mentioning

confidence: 99%

Understanding Aniline Surface Treatment of CdTe

et al. 2005

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Surface etching of CdTe under illumination in aqueous aniline-based solutions has been investigated. Analysis of treated samples shows the formation of crystalline Te on the CdTe surface. Analysis of bath and treatment conditions indicated the presence of aniline, Cl -ions, dissolved O 2 , consistent illumination and careful control of pH as critical for successful surface etching. A photocatalytic mechanism is proposed for the reaction, where CdTe is etched by H 2 O 2 or similar, generated through reduction of dissolved O 2 by conduction band electrons and complemented by oxidation of aniline. The generated Te is stable in the bath and the treatment provides reproducible surfaces. CdTe/CdS devices of 12% conversion efficiency were processed with 30 min aniline treatments. The toxicity of aniline is a concern and criteria for possible substitutes are discussed.

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Surface films on HgCdTe and CdTe etched in ferricyanide solution

Cited by 9 publications

References 10 publications

Electrochemical pore formation onto semiconductor surfaces

Electrochemical pore formation onto semiconductor surfaces

Porosity-induced gain of luminescence in CdSe

Understanding Aniline Surface Treatment of CdTe

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