After a review of the structural properties of (Hg,Cd)Te layers grown by MOVPE on GaAs substrates, topical questions such as out-diffusion of Ga and As from the substrate into the layers, monolithic integration of signal processing into the substrate and the presence of pyramidal defects in (100) layers will be discussed. In order to solve the last problem, a systematic study of the influence of the (hl 1) GaAs substrate orientation and polarity on the structural properties and surface morphology of CdTe layers grown by MOVPE has been carried out. Twin-free layers are obtained on (211)A, (311)B and (511)B GaAs surface orientations as explained by a model taking into account the type of dangling bonds at the interface. The performance of photoconductors fabricated on (Hg,Cd)Te layers of various orientations confirms these results. Particularly good results have been obtained for the (31 l ) B orientation.
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