Porosity-induced gain of luminescence in CdSe

Monaico, E.; Ursaki, V. V.; Urbieta, A.; Fernández, Paloma; Piqueras, J.; Boyd, Robert W.; Tiginyanu, I. M.

doi:10.1088/0268-1242/19/12/l04

Cited by 14 publications

(11 citation statements)

References 14 publications

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“…Formation of porous network in a p-type II-VI material, namely, in p-Cd 1−x Zn x Te, was demonstrated by Erne et al 7,8 Recently we succeeded in introducing pores into n-type CdSe, 9 and we observed gain of luminescence in porous regions characterized by strong light scattering. 10 In this article, we show the possibility of introducing arrays of parallel pores with diameters as low as 10-20 nm into highly conductive n-CdSe single crystals. Porosity-induced blueshift of exciton bands in PL spectra of n-CdSe is also reported.…”

Section: Introductionmentioning

confidence: 95%

Porosity-induced blueshift of photoluminescence in CdSe

Monaico

Ursaki

Tiginyanu

et al. 2006

Journal of Applied Physics

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Porous CdSe layers have been fabricated by anodic etching of n-type single crystalline substrates with different values of conductivity. The morphology and porosity of the layers thus produced were found to be controlled by the conductivity of the material, anodization voltage, and conditions of in situ UV illumination. The porosity-induced changes in the photoluminescence spectra were studied. The decrease of the skeleton size down to 10-20 nm was found to result in a blueshift of the excitonic emission lines by 10 meV which was attributed to quantum-size effects in the nanocrystalline CdSe porous skeleton. An increase of the exciton-LO-phonon interaction by a factor of 1.5 in a weak-to-intermediate confinement regime was deduced from the analysis of temperature dependence of the free exciton luminescence line.

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Section: Introductionmentioning

confidence: 95%

Porosity-induced blueshift of photoluminescence in CdSe

Monaico

Ursaki

Tiginyanu

et al. 2006

Journal of Applied Physics

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“…This is due primarily to the significant differences between the properties of porous semiconductors and their bulk counterparts [7], and to the potential new applications that these properties afford. For example, recent studies have reported porosity-induced birefringence in GaP with potential applications in optoelectronics [8,9], luminescence in porous III-V and II-VI semiconductors [10][11][12], the ability of porous III-Vs to support Fröhlich-type surface vibrations [13,14], and a porosity-induced blueshift of photoluminescence in CdSe [15]. There have also been studies of terahertz emission from porous InP [16].…”

Section: Introductionmentioning

confidence: 99%

Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy

et al. 2008

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We have investigated the terahertz conductivity of extrinsic and photoexcited electrons in nanoporous indium phosphide (InP) at different pore densities and orientations. The form of electronic transport in the film was found to differ significantly from that for bulk InP. While photo-generated electrons showed Drude-like transport, the behaviour for extrinsic electrons deviated significantly from the Drude model. Time-resolved photoconductivity measurements found that carrier recombination was slow, with lifetimes exceeding 1 ns for all porosities and orientations. When considered together, these findings suggest that the surfaces created by the nanopores strongly alter the dynamics of both extrinsic and photoexcited electrons.

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“…Currentline pores have so far been found in InP and GaP (2, 12 -16), again for a large variety of electrolytes. The classification can be easily extended to pores obtained in II-VI semiconductors (17,18), which closely resemble the currentline pores found in InP, as well as to Si and Ge, where most pore types have always been of the crysto pore type (19 -21), but currentline pore growth can also be obtained (22).…”

Section: Introductionmentioning

confidence: 84%

(Invited) Modeling Some "Meta" Aspects of Pore Growth in Semiconductors

2011

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A "meta" model for electrochemical pore growth in semiconductors is presented which is essentially based on two assumptions: i) current flow at the etching interface occurs in current bursts and not by constant current flow and ii) current flow depends on the passivation behavior at the etching interface. The meta model is thus not sensitive to factors like the semiconductor material or the detailed dissolution chemistry. In order to demonstrate the concept of the meta model a number of recent results in InP will be discussed. The treatise includes the mechanism of currentline and crystallographical pore growth, as well as the reasons for the characteristic transition between both pore growth modes. A numerical Monte Carlo model for pore growth based on the meta model, which is capable of closely simulating a number of pore structures, will also be presented.

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Porosity-induced gain of luminescence in CdSe

Cited by 14 publications

References 14 publications

Porosity-induced blueshift of photoluminescence in CdSe

Porosity-induced blueshift of photoluminescence in CdSe

Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy

(Invited) Modeling Some "Meta" Aspects of Pore Growth in Semiconductors

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