Surface-emitting GaInAsP/InP injection laser with short cavity length

Motegi, Yuichi; Soda, H.; Iga, Kenichi

doi:10.1049/el:19820314

Cited by 31 publications

(6 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The primary breakthrough was the fabrication of a 6 µm cavity VCSEL that demonstrated a clear VCSEL mode even at 77 K, in 1982; i.e., single-mode, circular beam, and linear polarization. 11) In Fig. 4, we show an image of a cleaved cross section.…”

Section: Achievement For Device Realizationmentioning

confidence: 99%

“…The 2nd report of the idea 9) 1979.09 Xerox patent, applied 29) 1980.01 Titech patent, applied 30) 1979. 12 The first report on VCSEL oscillation 10) 1982.05 6-µm cavity length GaInAsP VCSEL 11) 1986.10 6-mA I th GaAs VCSEL 15) 1988.07 GaAs=AlGaAs DBR VCSEL 25) 1988.09 Detailed characteristics of VCSEL 2) 1988.09…”

Section: Advantages Of Vcsels and Possible Applicationsmentioning

confidence: 99%

See 1 more Smart Citation

Forty years of vertical-cavity surface-emitting laser: Invention and innovation

Iga

2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Forty years has passed since I conceived the idea of a vertical-cavity surface-emitting laser (VCSEL) in 1977. This review is focused on its research and development by featuring host technologies that contributed to the realization of usable devices. After numerous innovations, the VCSEL is now generating new applications such as high-speed local area networks, computer mice, parallel optical interconnects, laser printers, face recognition systems, and various optical sensors.

show abstract

Section: Achievement For Device Realizationmentioning

confidence: 99%

Section: Advantages Of Vcsels and Possible Applicationsmentioning

confidence: 99%

Forty years of vertical-cavity surface-emitting laser: Invention and innovation

Iga

2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…2, with a thickness of about 6 mm, to render the threshold current small. 8) Such a device exhibited surface-emitting laser performance with a low threshold even at low temperature. The author considered laser oscillation to be verified by this experiment.…”

Section: Conception Of Vertical-cavity Surface-emitting Lasermentioning

confidence: 99%

Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution

Iga

2008

jjap

216

112

View full text Add to dashboard Cite

The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local-area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultraparallel data transfer in equipment and computer systems. In this paper, we will review its physics and the progress of technology covering the spectral band from the infrared to the ultraviolet, by featuring materials, fabrication technology, and performances such as threshold, output power, polarization, modulation and reliability. Lastly, we will touch on its future prospects.

show abstract

“…The vertical cavity surface emitting laser (VCSEL) was invented by Kenichi Iga in 1979 [10][11][12]. This first device was based upon GaInAsP/InP and operated at 1250 nm, a materials system and wavelength range that are still among the most challenging wavelengths to realize, even today.…”

Section: Introductionmentioning

confidence: 99%

Emerging applications for vertical cavity surface emitting lasers

Harris¹,

O’Sullivan²,

Sarmiento³

et al. 2010

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light.

show abstract

Surface-emitting GaInAsP/InP injection laser with short cavity length

Cited by 31 publications

References 3 publications

Forty years of vertical-cavity surface-emitting laser: Invention and innovation

Forty years of vertical-cavity surface-emitting laser: Invention and innovation

Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution

Emerging applications for vertical cavity surface emitting lasers

Contact Info

Product

Resources

About