Emerging applications for vertical cavity surface emitting lasers

Harris, James S.; O’Sullivan, Thomas D.; Sarmiento, Tomás; Lee, Meredith M.; Vo, Sonny

doi:10.1088/0268-1242/26/1/014010

Cited by 42 publications

(17 citation statements)

References 66 publications

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“…In a conventional VCSEL with current injection through doped DBRs, this involves a trade-off since higher doping levels lead to reduced re-sistance and increased free-carrier absorption [14,25,32]. More effective is the use of an intracavity contact and a dielectric top DBR [4] as both resistance and optical absorption can be reduced. In addition, it has been shown that reducing the photon lifetime through increased transmission through the top DBR can reduce internal optical absorption, thereby delaying thermal rollover [8,21] and improving dynamic performance [10].…”

Section: Thermal Analysismentioning

confidence: 99%

“…This can be attributed to the availability of commercial multimode fibers that employ VCSELs operating near 850 nm for short-haul communication links in data centers and high-performance computing systems. Further, such VCSELs have shown the potential to play an important role in future high speed optical interconnects and consumer electronics [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

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Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

et al. 2011

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Abstract:We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 • C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-μm inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them. Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication, Characterization, and Applications, (Cambridge Univ. Press, 1999). 23. C. J. Chang-Hasnain, C. E. Zah, G. Hasnain, J. P. Harbison, L. T. Florez, N. G. Stoffel, and T. P. Lee, "Effect of operating electric power on the dynamic behavior of quantum well vertical-cavity surface-emitting lasers," Appl.

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Section: Thermal Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

et al. 2011

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“…6 Quantum dot VCSELs at 1.28 lm have all recently been demonstrated. 7 1.3 lm GaInNAs(Sb)-based QW VCSELs have been produced at 1.53 lm under pulsed excitation, 8 however, the material quality of dilute nitrides remains an issue. 9 Another possible GaAs-based system which has received less attention utilises GaAsSb/GaAs QWs.…”

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confidence: 99%

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Hild

Marko

Johnson

et al. 2011

Applied Physics Letters

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In this letter, we measure the pure spontaneous emission and lasing emission from a working vertical cavity surface emitting laser (VCSEL) for a wide range of temperatures. From this spontaneous emission, we gain insight into the temperature dependence of the radiative component of the threshold current (and hence gain). Together with the temperature dependence of the threshold current, the cavity mode to gain peak alignment and the temperature dependence of an equivalent active region edge emitting laser, we show how non-radiative recombination coupled with gain-cavity de-tuning influences the thermal properties of these devices.

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“…15 However, there is emerging interest to extend VCSEL processing techniques to reach shorter wavelengths for biosensing. In particular, excitation at 670-675 nm is appropriate for applications using emerging deep-red and NIR fluorescent proteins 16 or a number of fluorophores, including Cy5.…”

Section: Introductionmentioning

confidence: 99%

Integrated photonic structures for parallel fluorescence and refractive index biosensing

et al. 2011

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We present a multi-modality optical sensing platform employing integrated Vertical Cavity Surface Emitting Lasers (VCSELs), photodetectors, and filters suitable for portable, real-time analyte detection in aqueous environments. Fluorescence and refractive index sensors designed to utilize visible and near-infrared VCSELs for low background absorption from analyte delivery fluids are described. We demonstrate in vitro fluorescence sensing of Cy5.5 dye with a detection sensitivity of 5 nM and photonic crystal slab refractive index sensing with tunable GaAs-based 670 nm VCSELs. This compact, parallel sensor architecture enables multiplexed, cost-effective on-chip biosensing.

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Emerging applications for vertical cavity surface emitting lasers

Cited by 42 publications

References 66 publications

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Integrated photonic structures for parallel fluorescence and refractive index biosensing

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