Surface defects of closed-system-grown CdxHg1–xTe epitaxial layers

Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed.

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Closed system LPE growth of CdxHg1−xTe

Mironov

Ogorodnikov

Rozumnyi

et al. 1983

Phys. Stat. Sol. (a)

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Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications

Herman

Pessa

1985

Journal of Applied Physics

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This article presents a review of the state of the art of research and development on Hg1−xCdxTe -Hg1−yCdyTe (0≤x,y≤1) heterostructures important for applications in the modern infrared detection technique. It deals with the fundamental physical properties, epitaxial growth methods, and applications of these structures. The most important experimental results relevant to this subject are described and discussed. Following a short survey of the physical properties of Hg1−xCdxTe, the travelling heater method for growing bulk crystals of Hg1−xCdxTe has been described and compared with the epitaxial growth techniques used to prepare thin films and layered structures of this compound. Some important aspects of substrate preparation procedures related to CdTe wafers have been discussed. Then the most important problems regarding the liquid-phase, vapor-phase, and molecular-beam-epitaxy methods of Hg1−xCdxTe -Hg1−yCdyTe (0≤x,y≤1) heterostructures have been studied. A comprehensive discussion of technology and the parameters of different heterostructure photodiodes made of Hg1−xCdxTe with electrically passive and electrically active heterointerfaces has been presented. The review is concluded with an overview of research problems relevant to HgTe-CdTe superlattices and the surfaces and heterointerfaces of Hg1−xCdxTe.

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Surface defects of closed-system-grown CdxHg1–xTe epitaxial layers

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Closed system LPE growth of CdxHg1−xTe

Closed system LPE growth of CdxHg1−xTe

Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications

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