Closed system LPE growth of CdxHg1−xTe

Abstract

Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed.

Optical and Structural Properties of Hg-=SUB=-0.7-=/SUB=-Cd-=SUB=-0.3-=/SUB=-Te Epitaxial Films

“…The MBE-synthesized layers were produced on the GaAs(013) and Si(013) substrates with the ZnTe and CdTe buffer layers in Rzhanov Institute of Semiconductor Physics (Russia) by a procedure described in the paper [12]. The LPE-produced layers were grown in a grown system from tellurium-enriched melts on the Cd(Zn)Te(111) substrates in accordance with the procedure discussed in the paper [13]. After the growth, the samples were annealed in the Hg saturated vapor at 230 • C during 48 h. For comparison, the samples of the bulk crystals were also studied, and the crystals were grown in JSC " Chistye Metally" (Ukraine) by a modified method of vertically directed crystallization (VDC) with make-up out of the solid phase.…”

Conductivity and Mobility Profiles at 300 and 77 K of Epitaxial Cd x Hg1 − x Te Layers

“…In longitudinal recording the density increase depends on the reduction of four parameters: head to medium spacing, head gap length, medium remanence to coercivity ratio (B~/Hc) and medium thickness (t) (5,6). Therefore, it is very important that the magnetic film covers the substrate uniformly at the very early stages of its deposition and when this film becomes continuous.…”

“…lc and d. Epitaxial layers grown from dilute Hg-rich melt are compositionally graded along the axis perpendicular to the growth surface owing to Cd depletion from the melt phase during growth (5,6). The figures show a sharp decrease in sheet mobility (at 300 and 77K) as the CdxHg~_~Te/substrate interface is approached as a result of the layer becoming more Cd rich (6).…”

Оптические и структурные свойства эпитаксиальных слоев Hg-=SUB=-0.7-=/SUB=-Cd-=SUB=-0.3-=/SUB=-Te

“…В настоящей работе представлены результаты сравнительного исследования оптических и структурных свойств эпитаксиальных слоев КРТ с x ≈ 0.3, выращенных различными методами, с целью анализа перспектив использования этих материалов в различных приборных структурах. на подложках Cd(Zn)Te(111) в соответствии с методикой, представленной в работе [13] На рис. 3 приведены примеры температурных зависимостей положений максимумов полос ФЛ E PL (T ) для некоторых образцов (символы), а также зависимость ширины запрещенной зоны E g (T ), рассчитанная для КРТ с x = 0.32 в cоответствии с эмпирическим соотношением E g (x, T ) из работы [15] (сплошная кривая).…”