Surface blistering of low temperature annealed hydrogen and helium co-implanted germanium and its application to splitting of bonded wafer substrates

Hurley, R.E.; Wadsworth, H.; Montgomery, Jenny; Gamble, Harold

doi:10.1016/j.vacuum.2009.01.016

Cited by 16 publications

(14 citation statements)

References 25 publications

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“…This is a key result since it shows that a long time anneal at a temperature as low as 100°C reduces significantly the time-to-blister at 300°C, as compared to state-of-the-art data. 2,10 Roughness measurements show evidence of blistering, which is confirmed by X-TEM analysis and suggested by XRD patterns. On the sample annealed at 150°C for 22 h and subsequently annealed at 300°C for 5 min, the formation of microcracks is observed.…”

Section: Rms Roughness ͑Nm͒ Scan Areasupporting

confidence: 56%

“…Recently, co-implantation of hydrogen and helium for low temperature ͑300°C͒ exfoliation of germanium has been successfully demonstrated. 10 This approach presents a relatively long time-to-blister anneal at a temperature of 300°C ͑40 min͒. In this paper, an exfoliation process which does not require any helium coimplant is investigated which significantly reduces the time required for exfoliation at temperatures near 300°C.…”

Section: Introductionmentioning

confidence: 99%

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Low temperature exfoliation process in hydrogen-implanted germanium layers

Ferain

Byun

Colinge

et al. 2010

Journal of Applied Physics

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The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5×1016 H2+ cm−2 at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (≤150 °C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 °C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 °C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved.

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Section: Rms Roughness ͑Nm͒ Scan Areasupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Low temperature exfoliation process in hydrogen-implanted germanium layers

Ferain

Byun

Colinge

et al. 2010

Journal of Applied Physics

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“…22 Helium implantation alone does not induce surface blistering in germanium, except at very high doses ͑several ϫ10 17 atoms/cm −2 ͒. Therefore, surface roughening due to blistering is not a problem with Raman or SRP.…”

Section: Resultsmentioning

confidence: 97%

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Rainey

Wasyluk

Perova

et al. 2011

Electrochem. Solid-State Lett.

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“…The exfoliation process requires three steps: (i) implanting a device wafer with a relatively high dose of hydrogen (5), helium (6), or hydrogen-helium co-implants (7) to create the defective region below the surface, (ii) direct bonding of the implanted wafer to the host substrate, and (iii) annealing of the bonded pair, to increase the bonding energy and also to achieve layer splitting by increasing the pressure inside the blisters caused by trapping the implanted molecules in the defects. The higher the annealing temperature, the higher the bond strength; however, the trade off is that when dissimilar materials are used, it is desirable that the splitting temperature is low enough to avoid stress problems associated with the difference in the thermal expansion coefficients and consequently breakage of the wafers.…”

Section: Introductionmentioning

confidence: 99%

Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

et al. 2012

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We report on the formation and electrical characterization of current transport across a p-Ge to n-Si diode structure obtained by direct wafer bonding and layer exfoliation. A low temperature anneal at 400 °C for 30 minutes improved the forward characteristics of the diode. The I on /I off ratio > 5×10 4 and > 8×10 3 is obtained at -0.5 V and -1 V, respectively The carrier transport mechanism was analyzed based on the I-V and C-V measurements and direct tunneling is suggested as the transport mechanism. This fabrication technique using a low thermal budget (T ≤ 400 °C) is an attractive option for heterogeneous integration.

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Surface blistering of low temperature annealed hydrogen and helium co-implanted germanium and its application to splitting of bonded wafer substrates

Cited by 16 publications

References 25 publications

Low temperature exfoliation process in hydrogen-implanted germanium layers

Low temperature exfoliation process in hydrogen-implanted germanium layers

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

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