Surface blistering of low-temperature annealed hydrogen and helium co-implanted silicon and its application to splitting of bonded wafer substrates

Hurley, R.E.; Wadsworth, H.; Gamble, Harold

doi:10.1016/j.vacuum.2007.01.017

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…the Arrhenius plot, is shown in figure 2. It can be clearly seen that two different activation energies are observed in the plot: about 1.60 eV in the lower temperature regime of 350-425 • C and 0.40 eV in the higher temperature regime of 425-700 • C. A similar kind of blistering kinetics behavior has been observed in some earlier studies also for Si, Ge and SiGe [17,[18][19][20][21]. It was reported by Aspar et al that in the case of H-implanted Si(1 0 0) with a fluence of 6 × 10 16 H + cm −2 , two activation energies for the splitting process were observed: 0.50 eV at the higher temperatures and 2.2 eV in the lower temperature regime [20].…”

Section: Resultssupporting

confidence: 83%

“…In the present case involving H-implantation of Si 0.70 Ge 0.30 two activation energies are also obtained: 0.40 eV in the higher temperature regime and 1.60 eV in the lower temperature regime. The lower activation energy is close to the activation energy for diffusion of free hydrogen in Si (0.50 eV) and also in Ge (0.38 eV) [21,22]. SiGe is an alloy semiconductor and hence we may expect the hydrogen diffusion activation energy to have a value between 0.50 and 0.38 eV, depending upon the Ge content in SiGe.…”

Section: Resultssupporting

confidence: 59%

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Investigation of a hydrogen implantation-induced blistering phenomenon in Si_0.70Ge_0.30

Singh

Scholz

Christiansen

et al. 2011

Semicond. Sci. Technol.

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The blistering phenomenon in hydrogen implanted and annealed Si 0.70 Ge 0.30 (0 0 1) layers was investigated. The implantation was performed with 240 keV H 2 + ions with a fluence of 5 × 10 16 cm −2. The blistering kinetics of H-implanted Si 0.70 Ge 0.30 showed two different activation energies: about 1.60 eV in the lower temperature regime (350-425 • C) and 0.40 eV in the higher temperature regime (425-700 • C). Microstructural characterization of the implantation damage in SiGe layers using transmission electron microscopy revealed a damage band extending between 900 and 1200 nm below the surface. It was observed that after post-implantation annealing, a number of platelets and microcracks were formed within the damage band. These extended defects are predominantly oriented parallel to the surface, i.e. in the (0 0 1) plane. However, the extended defects oriented along the {1 1 1} planes were also observed and the density of these defects was the highest toward the end of the damage band. These experimental observations are compared with similar investigations in Si and Ge performed earlier and a plausible explanation for the blistering results in Si 0.70 Ge 0.30 is presented in this work.

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Section: Resultssupporting

confidence: 83%

Section: Resultssupporting

confidence: 59%

Investigation of a hydrogen implantation-induced blistering phenomenon in Si_0.70Ge_0.30

Singh

Scholz

Christiansen

et al. 2011

Semicond. Sci. Technol.

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“…Hydrogen and helium ion co-implantation in silicon can effectively fabricate silicon-in-insulator (SOI) wafers, called the Smartcut process [1,2]. Due to hydrogen being more efficient in interacting chemically with the implantation damage and creating H-stabilized microcracks.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Zhang

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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Investigation of stress and structural damage in H and He implanted Ge using micro‐Raman mapping technique on bevelled samples

Wasyluk

Rainey

Perova

et al. 2011

J Raman Spectroscopy

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The results on structural damage in germanium wafers caused by hydrogen and helium implants of typical doses used in Smart Cut™ Technology (1–6 × 1016 atoms/cm2) are investigated using Raman mapping and spreading resistance profiling techniques. Raman line‐mapping measurements were performed up to the depth of ~400 nm into a Ge substrate (well beyond the limit of visible light penetration depth) using a bevelling technique. From analysis of the Ge–Ge Raman peak it was found that implantation of H and He introduced a different type of stress, tensile and compressive, respectively and significant structural damage with maximum at the projected range. The obtained data shows that hydrogen incorporation in Ge can act as an acceptor. This is undesirable when the hydrogen ion‐cut technology is applied to high resistivity Ge. The crystalline structure after implantation is completely recovered when annealed at 600 °C for both types of implants. Spreading resistance profiling results reveal that 4−8x1015 acceptors/cm3 remain after 600 °C, and these are thought to be because of vacancy related defect clusters. Copyright © 2011 John Wiley & Sons, Ltd.

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Surface blistering of low-temperature annealed hydrogen and helium co-implanted silicon and its application to splitting of bonded wafer substrates

Cited by 7 publications

References 17 publications

Investigation of a hydrogen implantation-induced blistering phenomenon in Si_0.70Ge_0.30

Investigation of a hydrogen implantation-induced blistering phenomenon in Si_0.70Ge_0.30

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Investigation of stress and structural damage in H and He implanted Ge using micro‐Raman mapping technique on bevelled samples

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Surface blistering of low-temperature annealed hydrogen and helium co-implanted silicon and its application to splitting of bonded wafer substrates

Cited by 7 publications

References 17 publications

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Investigation of stress and structural damage in H and He implanted Ge using micro‐Raman mapping technique on bevelled samples

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Investigation of a hydrogen implantation-induced blistering phenomenon in Si_0.70Ge_0.30

Investigation of a hydrogen implantation-induced blistering phenomenon in Si_0.70Ge_0.30