Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Li, B.S.; Zhang, C.H.; Zhang, H.H.; Zhang, Y.; Yang, Yitao; Zhou, Lihong; Zhang, L.Q.

doi:10.1016/j.nimb.2009.12.009

Cited by 10 publications

(2 citation statements)

References 15 publications

(17 reference statements)

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“…To carefully investigate the surface morphology after H 2 + -implantation into 6H-SiC, an AFM test was performed, and results are presented in Figure 4 . It can be seen that the shape of the exfoliation zone is not regular, near an oval shape, as shown in Figure 4 a, c. The formation of the exfoliation zone is due to the breakage of a surface blister when its inner stress exceeds the material fracture toughness [ 26 , 27 , 28 ]. The exfoliation zone is presented by a three-dimensional image, and the surface is not even, consisting of many hillocks.…”

Section: Resultsmentioning

confidence: 99%

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Wang

Zhi‐Jian²,

et al. 2020

Materials

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Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

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Section: Resultsmentioning

confidence: 99%

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Wang

Zhi‐Jian²,

et al. 2020

Materials

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“…In fact, the physical mechanisms of layer splitting can be conveniently investigated by studying the occurrence of surface blisters/exfoliations in H-implantation and annealing without bonded wafers [6,7,10,11]. Kucheyev et al [5] reported the H-implantation-induced exfoliation in GaN.…”

Section: Introductionmentioning

confidence: 99%

Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

Wang

Zhang

2015

Thin Solid Films

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Lattice disorder and N elemental segregation in ion implanted GaN epilayer

Liu

et al. 2020

Applied Surface Science

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Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Cited by 10 publications

References 15 publications

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

Lattice disorder and N elemental segregation in ion implanted GaN epilayer

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