Lattice disorder and N elemental segregation in ion implanted GaN epilayer

Li, B.S.; Liu, H.P.; Xu, Lijun; Wang, J.; Song, Jae Bok; Peng, Dingping; Li, J.H.; Zhao, Fuqiang; Kang, Long; Zhang, T.M.; Tang, Hexi; Xiong, An.L.

doi:10.1016/j.apsusc.2019.143911

Cited by 10 publications

(10 citation statements)

References 58 publications

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“…The detailed process of the XTEM sample preparation is reported in Ref. [14]. The HRTEM sample was observed along the [11−20] zone axis.…”

Section: Experimental Processmentioning

confidence: 99%

“…A rather large number of papers were published in the last three decades on the formation and evolution of He bubbles which show that the formation and growth of the bubble are dependent on the implantation dose, temperature, and annealing conditions. [13][14][15][16][17][18][19][20][21] However, the influence of as-implanted lattice defects on the evolution of cavities and extended defects in He implanted 6H-SiC is less investigated. Most of the published results are related to the RT implantation and then high-annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

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Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C*

Liao

Kang

et al. 2020

Chinese Phys. B

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The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 °C followed by annealing at 1500 °C are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 °C. The possible reasons are discussed.

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“…The detailed process of the XTEM sample preparation is reported in Ref. [14]. The HRTEM sample was observed along the [11−20] zone axis.…”

Section: Experimental Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C*

Liao

Kang

et al. 2020

Chinese Phys. B

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“…The smart-cut process depends on different parameters, such as temperature and annealing time [ 8 ], He and H fluences [ 14 ], the He to H fluences ratio [ 15 ], He and H relative depth distributions (imposed by respective ion energies [ 16 ]) and the relative order of He and H implantation [ 17 ]. In the early period, most interest in the applications of this method was devoted to studying helium bubble formation and evolution in semiconductors [ 18 , 19 , 20 , 21 , 22 , 23 ]. During He implantation, numerous helium atoms and cascade collision-induced Frenkel pairs are introduced.…”

Section: Introductionmentioning

confidence: 99%

“…After thermal annealing at low temperatures (even at room temperature), He-V complexes tend to migrate and agglomerate into He bubbles. These bubbles exhibit a spherical shape and have a very high inner pressure, which can be released by emitting Si interstitials (i.e., the dislocation loop punching phenomenon) [ 18 ]. Frequently, {113} defects are found around bubbles [ 19 ].…”

Section: Introductionmentioning

confidence: 99%

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

et al. 2021

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Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

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“…Such damage not only induces micro-structural change, but also leads to a change in electrical properties. Most of the previous studies were performed on low-energy ion implantation and on the swift heavy ion (SHI) irradiation [21,22,[27][28][29][30][31][32][33], but there have been only a few studies reporting on MEI irradiation [34,35]. Therefore, the investigation of the impacts of MEI irradiation on semiconductors and their device properties is important both from a fundamental and technological point of view.…”

Section: Introductionmentioning

confidence: 99%

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

et al. 2020

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The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 × 1013 to 1 × 1015 ions cm−2. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 1013 ions cm−2 and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion.

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Lattice disorder and N elemental segregation in ion implanted GaN epilayer

Cited by 10 publications

References 58 publications

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C*

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C*

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

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