Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide

Mayer, J.; Lin, R.F.; Garfunkel, Eric

doi:10.1016/0039-6028(92)90491-n

Cited by 52 publications

(26 citation statements)

References 30 publications

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“…Such transitions are limited thermodynamically by a nucleation barrier, which was overcome at the higher annealing temperatures [6,13]. The STEM observations of the NiSi 2 /Si interface in Fig.…”

Section: In Situ Annealingmentioning

confidence: 99%

“…However, in the current study Ni did indeed diffuse through the native oxide layer into the Si substrate to form layers A 0 and A at temperatures of the order of 110-150°C. The Ni diffusion is therefore facilitated by a high concentration of defects in the amorphous native oxide [13,16]. Areas where the native oxide film is discontinuous (Fig.…”

Section: As-deposited Filmsmentioning

confidence: 99%

“…Interfacial stresses have so far only been considered for silicidation processes in the absence of any diffusion barriers [19]. The literature overview provided above indicates that ultrathin stoichiometric SiO 2 films act as excellent diffusion barriers below about 800°C [13][14][15][16]23]. However, sub-stoichiometric oxide films, such as native SiO 2 , may be characterized by significantly lower activation energies for metal diffusion through the oxide layer [15,17,20].…”

Section: Introductionmentioning

confidence: 99%

“…The incorporation of oxygen at the Ni/Si interface can, however, delay any solid-state reaction between film and substrate. Mayer and co-workers [13] have shown that a continuous layer of thermal SiO 2 with a thickness as small as 5 Å acts as a diffusion barrier for Ni below 700 K. At higher temperatures, however, Pretorius et al [14] found that Ni films react with underlying SiO 2 by forming voids in the oxide through which the metal can diffuse to the SiO 2 /Si interface and from silicide layers. Another study reports that, independent of the quality (i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Thin films of Ni on SiO 2 are kinetically constrained after low-temperature growth and agglomerate when annealed at or above 200°C [13,17,[21][22][23]. Film dispersion occurs through thermal grooving at the grain boundaries of the metal film, and is kinetically driven by surface diffusion of Ni away from the grain boundaries [24].…”

Section: Introductionmentioning

confidence: 99%

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Structural changes during the reaction of Ni thin films with (100) silicon substrates

et al. 2012

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Ultrathin films of nickel deposited onto (1 0 0) Si substrates were found to form kinetically constrained multilayered interface structures characterized by structural and compositional gradients. The presence of a native SiO 2 on the substrate surface in tandem with thickness-dependent intrinsic stress of the metal film limits the solid-state reaction between Ni and Si. A roughly 6.5 nm thick Ni film on top of the native oxide was observed regardless of the initial nominal film thickness of either 5 or 15 nm. The thickness of the silicide layer that formed by Ni diffusion into the Si substrate, however, scales with the nominal film thickness. Cross-sectional in situ annealing experiments in the transmission electron microscope elucidate the kinetics of interface transformation towards thermodynamic equilibrium. Two competing mechanisms are active during thermal annealing: thermally activated diffusion of Ni through the native oxide layer and subsequent transformation of the observed compositional gradient into a thick reaction layer of NiSi 2 with an epitaxial orientation relationship to the Si substrate; and, secondly, metal film dispersion and subsequent formation of faceted Ni islands on top of the native oxide layer.

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Section: In Situ Annealingmentioning

confidence: 99%

Section: As-deposited Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural changes during the reaction of Ni thin films with (100) silicon substrates

et al. 2012

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Reactive Processes of Nickel Oxide on Oxidic Substrates as Observed by Scanning Force Microscopy

Zöllner

Kipp

Becker

2000

Cryst. Res. Technol.

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High‐temperature diffusion/reaction processes of nickel oxide (NiO) have been studied on oxidic surfaces. Nickel was sputtered on silicon dioxide (SiO2, quartz) and on yttrium stabilized zircon dioxide (YSZ). The metallic films with layer‐thicknesses of 200 ‐ 800 nm possessing well‐defined steps and shapes, subsequently were annealed in air. On quartz, the thermal anneal at 500°C led to the formation of nickel olivine. Thermal anneal on YSZ at 500°C led to the formation of NiO. Further treatment at 1200°C caused the development of a sigmoid profile at the former step of the NiO film. The evolution of the topological changes with annealing time is not completely understood, but surface diffusion of NiO must play an essential role.

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Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO₂ Diffusion Barriers

Simmons

Nichols

Marcus

et al. 2006

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The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand the range of applications considerably. Though direct integration using chemical vapor deposition is the simplest method, the growth of single-walled carbon nanotubes on bare silicon and on ultra-thin oxides is greatly inhibited due to the formation of a non-catalytic silicide. Using x-ray photoelectron spectroscopy, we show that silicide formation occurs on ultra-thin oxides due to thermally activated metal diffusion through the oxide. Silicides affect the growth of single-walled nanotubes more than multi-walled nanotubes due to the increased kinetics at the higher single-walled nanotube growth temperature. We demonstrate that nickel and iron catalysts, when deposited on clean silicon or ultra-thin silicon dioxide layers, begin to form silicides at relatively low temperatures, and that by 900 o C, all of the catalyst has been incorporated into the silicide, rendering it inactive for subsequent single-walled nanotube growth.We further show that a 4 nm silicon dioxide layer is the minimum diffusion barrier thickness which allows for efficient single-walled nanotube growth.

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Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide

Cited by 52 publications

References 30 publications

Structural changes during the reaction of Ni thin films with (100) silicon substrates

Structural changes during the reaction of Ni thin films with (100) silicon substrates

Reactive Processes of Nickel Oxide on Oxidic Substrates as Observed by Scanning Force Microscopy

Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO₂ Diffusion Barriers

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Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide

Cited by 52 publications

References 30 publications

Structural changes during the reaction of Ni thin films with (100) silicon substrates

Structural changes during the reaction of Ni thin films with (100) silicon substrates

Reactive Processes of Nickel Oxide on Oxidic Substrates as Observed by Scanning Force Microscopy

Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers

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Product

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Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO₂ Diffusion Barriers