Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

Lee, Jae‐Hoon; Park, Hyun-Sang; Jeon, Jae‐Hong; Han, Min−Koo

doi:10.1016/j.sse.2007.10.031

Cited by 9 publications

(7 citation statements)

References 7 publications

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“…This increase of 2 A is due in fact to the storage of the threshold voltage Th-TFT2 of TFT2 in the capacitance stg . Moreover the presence of leakage current in the OLED during the reset phase requires us to add another transistor to eliminate it, because this current becomes critical for the lifetime of OLED so in screen over time where the screen colours will become darker if we exceed certain hours of operation and has a direct effect on the contrast and on the stored charge in stg [9]. So it must be reducing leakage current.…”

Section: The Proposed Driver Pixel Circuitmentioning

confidence: 99%

“…In particular, these driver circuits can be classified into two programming modes in accordance with the data type: voltage-programming circuit and current-programming circuit [6]. However for both types of circuits at the driving scheme, the variations in threshold voltage of TFTs, due to the change in mobility under the influence of operating time and under abnormal thermal conditions which can attain, respectively, 10% to 50%, the data degradation, and the change in supply voltage, the leakage current [9], and the speed, generate degradation and nonuniformity in brightness over time in the pixel itself and in many cases there is a fluctuation in brightness in the surrounding pixels. These disturbances add up over time and may be the cause of poor vision.…”

Section: Introductionmentioning

confidence: 99%

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High Efficiency Driver for AMOLED with Compensation

Saad

Hassine

2015

Advances in Electronics

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A new proposed compensation driver circuit of flat-panel display (FPD) based on organic light emitting diodes (OLEDs) and on poly-crystalline silicon thin-film transistors (poly-Si TFTs) is presented. This driver circuit is developed for an active-matrix organic light-emitting-diode (AMOLED) display and its efficiency is verified compared with the conventional configuration with 2 TFTs. According to results, this circuit is suitable to achieve acceptable level for power consumption, high contrast, maximum gray levels, and better brightness. And, to show this, a stable driving scheme is developed for circuit with much compensation such as against the data degradation, the threshold voltage dispersions of TFT drive, and suppression of TFT leakage current effect.

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Section: The Proposed Driver Pixel Circuitmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High Efficiency Driver for AMOLED with Compensation

Saad

Hassine

2015

Advances in Electronics

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“…Furthermore, even for silicon backplanes leakage is a common issue, and different circuit designs have been implemented to bypass it 31–33. The standard two‐transistor active matrix can be replaced, for example, by a three‐transistor geometry in which leakage current effects are significantly minimized 34…”

Section: Characteristics Of Oets and Oledsmentioning

confidence: 99%

High‐Transconductance Organic Thin‐Film Electrochemical Transistors for Driving Low‐Voltage Red‐Green‐Blue Active Matrix Organic Light‐Emitting Devices

Braga

Erickson

Renn

et al. 2012

Adv Funct Materials

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Switching and control of effi cient red, green, and blue active matrix organic light-emitting devices (AMOLEDs) by printed organic thin-fi lm electrochemical transistors (OETs) are demonstrated. These all-organic pixels are characterized by high luminance at low operating voltages and by extremely small transistor dimensions with respect to the OLED active area. A maximum brightness of ≈ 900 cd m − 2 is achieved at diode supply voltages near 4 V and pixel selector (gate) voltages below 1 V. The ratio of OLED to OET area is greater than 100:1 and the pixels may be switched at rates up to 100 Hz. Essential to this demonstration are the use of a high capacitance electrolyte as the gate dielectric layer in the OETs, which affords extremely large transistor transconductances, and novel graded emissive layer (G-EML) OLED architectures that exhibit low turn-on voltages and high luminescence efficiency. Collectively, these results suggest that printed OETs, combined with effi cient, low voltage OLEDs, could be employed in the fabrication of fl exible full-color AMOLED displays.

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“…However, when the drain bias (V DS ) of AMFERTA poly-Si TFT is 10.1 V, the off-state drain current (leakage current) is above 10 -11 A, which is too large to use as a pixel TFT in an AMOLED display. 9 This leakage current must be suppressed to achieve good image quality and low power consumption.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric source/drain offset structure for reduced leakage current in polycrystalline‐silicon thin‐film transistors

Lee¹,

Park²,

Jeong³

et al. 2009

J Soc Info Display

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Abstract— An asymmetric source/drain offset structured (AOS) polycrystalline‐silicon (poly‐Si) thin‐film transistor (TFT) has ben developed by employing alternating magnetic‐field‐enhanced rapid thermal annealing (AMFERTA). The realized AOS poly‐Si TFT, with long drain‐side offset length LOff1 and short source‐side offset length LOff2, considerably suppresses leakage current without sacrificing ON‐current. The offset regions of the AOS TFT are naturally lightly doped due to the diffusion of n+ ions by AMFERTA crystallization. The fabrication process of the AOS TFT does not require any additional offset mask step or doping process. Experimental results show that the leakage current is considerably suppressed when the drain‐side offset length LOff1 is larger than 1.25 μm.

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Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

Cited by 9 publications

References 7 publications

High Efficiency Driver for AMOLED with Compensation

High Efficiency Driver for AMOLED with Compensation

High‐Transconductance Organic Thin‐Film Electrochemical Transistors for Driving Low‐Voltage Red‐Green‐Blue Active Matrix Organic Light‐Emitting Devices

Asymmetric source/drain offset structure for reduced leakage current in polycrystalline‐silicon thin‐film transistors

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