Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

Kato, Daimotsu; Kajiwara, Y.; Mukai, Akira; Ono, Hiroshi; Shindome, Aya; Tajima, Jumpei; Hikosaka, Toshiki; Kuraguchi, Masahiko; Nunoue, Shinya

doi:10.35848/1347-4065/ab6b7f

Cited by 6 publications

(5 citation statements)

References 36 publications

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“…Using negative Capacitance FINFET [31], using dual metal gate [32,33] the SCEs can be suppressed but these requires complex fabrication processes. Gate recess [34,35] can be another solution although an optimised approach should be used in this case to avoid the leakage.…”

Section: Introductionmentioning

confidence: 99%

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Raychaudhuri,

Mukherjee,

Kumar

et al. 2024

Phys. Scr.

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In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg ≈ 0.15μm). We have studied the effect of short gate length on the small signal parameters, linearity parameters and gm-gd ratio in GaN HEMT devices. To understand how scaling results in the variation of the above-mentioned parameters a comparative study with higher gate length devices on similar heterostructure is also presented here. We have scaled down the gate length but the barrier thickness(tbar) remained same which affects the aspect ratio (Lg/tbar) of the device and its inseparable consequences are the prominent short channel effects (SCEs) barring the optimum output performance of the device. These interesting phenomena were studied in detail and explored over a temperature range of -40 oC to 80 oC. To the best of our knowledge this paper explores temperature dependence of SCEs of GaN HEMT for the first time. With an approach to reduce the impact of SCEs a simulation study in Silvaco TCAD was carried out and it is observed that a recessed gate structure on conventional heterostructure successfully reduces SCEs and improves RF performance of the device. This work gives an overall view of gate length scaling on conventional AlGaN/GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Raychaudhuri,

Mukherjee,

Kumar

et al. 2024

Phys. Scr.

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“…GaN-based devices, such as GaN/AlGaN high electron mobility transistors (HEMT) and GaN diodes, have been widely used as power devices because of their high breakdown voltage [ 1 , 2 , 3 ] and operation frequency [ 4 , 5 , 6 ]. Although GaN devices have many advantages, they are still suffering from some problems such as short channel effect [ 7 , 8 , 9 ] and current collapse effect [ 10 , 11 , 12 ]. To solve these problems, some researchers proposed double channel GaN HEMTs [ 13 , 14 , 15 , 16 , 17 , 18 ], which contain two GaN/AlGaN heterojunction conductive channels.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

et al. 2022

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A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.

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“…In recent times, scaling down of devices to keep up with Moore's law has become a very difficult task with the conventional silicon based complementary metal oxide semiconductor (CMOS) technology. The primary hurdle can be identified as the short channel effects (SCEs) associated with metal oxide semiconductor field effect transistors (MOSFET) [1][2][3][4][5][6] which degrades the performance of MOSFETs in the short channel regime. Moreover, high leakage current in MOSFETs 7,8 worsens the problem.…”

Section: Introductionmentioning

confidence: 99%

Linearity Performance and Distortion Analysis of Carbon Nanotube Tunneling FET

Hussain

Mustakim

Saha

2021

Journal of Elec Materi

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In this research work, we have varied several parameters of a carbon nanotube based tunneling field effect transistor (CNT-TFET) such as the dielectric constant of the gate insulator (j), channel length, oxide thickness, doping level, and the nature of doping to investigate how the performance of the CNT-TFET is affected. The performance analysis has been done based on the following performance criteria: Subthreshold swing (SS), threshold voltage (V T), and on-current to off-current ratio (I on /I off). In addition, we have also analyzed how linearity and distortion figures of merit such as second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), third-order input intercept point (IIP3), and third-order intermodulation distortion (IMD3) are affected by parametric variation. By observing the impact of parametric variation on this large number of performance metrics, a compromise choice of structural parameters is possible depending on the application. Moreover, we have proposed an asymmetric doping design that suppresses the highly undesirable ambipolar behavior in CNT-TFET. In a real-space approach, the simulation study has been carried out using the elegant non-equilibrium Green's function (NEGF) formalism considering tight-binding Hamiltonian.

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Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

Cited by 6 publications

References 36 publications

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Linearity Performance and Distortion Analysis of Carbon Nanotube Tunneling FET

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