Linearity Performance and Distortion Analysis of Carbon Nanotube Tunneling FET

Abstract

In this research work, we have varied several parameters of a carbon nanotube based tunneling field effect transistor (CNT-TFET) such as the dielectric constant of the gate insulator (j), channel length, oxide thickness, doping level, and the nature of doping to investigate how the performance of the CNT-TFET is affected. The performance analysis has been done based on the following performance criteria: Subthreshold swing (SS), threshold voltage (V T), and on-current to off-current ratio (I on /I off). In addition, we have also analyzed how linearity and distortion figures of merit such as second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), third-order input intercept point (IIP3), and third-order intermodulation distortion (IMD3) are affected by parametric variation. By observing the impact of parametric variation on this large number of performance metrics, a compromise choice of structural parameters is possible depending on the application. Moreover, we have proposed an asymmetric doping design that suppresses the highly undesirable ambipolar behavior in CNT-TFET. In a real-space approach, the simulation study has been carried out using the elegant non-equilibrium Green's function (NEGF) formalism considering tight-binding Hamiltonian.

Performance Investigation of Source Extension Approach on III–V Vertical Tunnel FET

“…Higher energy electrons are more likely to be chosen due to the energy filtering effect, and only those with sufficient energy can tunnel and contribute to the device's current. This results in a reduction of the leakage current [19]. When the ON-current increases, the TFET can better switch other circuit components since it can handle a more significant drive current.…”