Superjunction Power Devices, History, Development, and Future Prospects

Udrea, F.; Deboy, G.; Fujihira, Tatsuhiko

doi:10.1109/ted.2017.2658344

Cited by 301 publications

(117 citation statements)

References 58 publications

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“…Besides production tolerances, early depletion of the current-conducting n-columns may pose a final limit to the Superjunction principle as pointed out by Disney and Dolny [10]. For more background on the history and further use cases of the Superjunction principle, we refer the reader to a recently published article by Udrea et al [11].…”

Section: Two-dimensional Devices (2d)mentioning

confidence: 99%

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

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Section: Two-dimensional Devices (2d)mentioning

confidence: 99%

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

Self Cite

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“…First, considering high purity, electron mobility μ e = 8,000 cm 2 /V‐s was assumed in GaAs drift region. This value is about five to ten times as big as that of Si (1,450 cm 2 /V‐s), SiC (720 cm 2 /V‐s), GaN (1,000 cm 2 /V‐s), and diamond (1,600 cm 2 /V‐s) . On the other hand, breakdown field E B of SiC, GaN, and diamond is 2.0 MV/cm, 3.3 MV/cm, and 10 MV/cm, respectively, being about eight to forty times as big as that of Si (0.25 MV/cm) and GaAs (0.3 MV/cm) …”

Section: Possibility Of Reducing Rona Depending On Structure and Matementioning

confidence: 90%

“…Thus, transistor's on‐resistance R ON and withstand voltage V B were conventionally estimated through analyzing Schottky diodes with same drift regions. For example, analysis of devices with superjunctions (SJ) in drift region was carried out by Fujihira and Nakajima and colleagues . The present paper performs quantitative analysis with reference to the method by Nakajima and colleagues and reports results including the case of a single‐period SJ structure.…”

Section: Models For Approximate Quantitative Analysis Of On‐resistancmentioning

confidence: 99%

“…Regarding power devices including IGBTs, high withstand voltage V B must be provided, while on‐resistance R ON and element area A must be reduced. Thus, along with improvement of IGBTs, research and development have been made in field effect transistors using SiC, GaN, and other materials with wide forbidden band as well as in silicon superjunction power devices …”

Section: Introductionmentioning

confidence: 99%

“…In so doing, focus is placed on electron drift region; specifically, the paper examines and evaluates (1) devices with uniform drift region (Uni. devices), (2) devices with superjunctions (SJ), and (3) devices with hetero superjunctions (HSJ) . Particularly, GaAs lateral HSJ devices that were considered unsuitable for high voltage applications are shown to promise excellent characteristics.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

Kushida

Sakaki

2019

Elect Comm in Japan

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Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III‐V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product RON·A of their on‐resistance RON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1 kV, we clarify to which level the specific on‐resistance RON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of RON·A for HSJ devices can be lower than that of Si‐insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN‐based HSJ devices but also GaAs‐based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.

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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Ma,

Qin,

Porter

et al. 2023

Adv Elect Materials

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Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the WBG nickel oxide (NiO) as an alternative p‐type material is investigated. The acceptor concentration (NA) in NiO is modulated by oxygen partial pressure during magnetron sputtering and characterized using a p‐n+ heterojunction diode fabricated on gallium oxide (Ga2O3) substrate. Capacitance and breakdown measurements reveal a tunable NA from < 1018 cm−3 to 2×1018 cm−3 with the practical breakdown field (EB) of 3.8 to 6.3 MV cm−1. This NA range allows for charge balance to n‐type region with reasonable process latitude, and EB is high enough to pair with many WBG and UWBG semiconductors. The extracted NA is then used to design a multidimensional Ga2O3 diode with NiO field‐modulation structure. The diodes fabricated with two different NA both achieve 8000 V breakdown voltage and 4.7 MV cm−1 average electric field. This field is over three times higher than the best report in prior multi‐kilovolt lateral devices. These results show the promise of p‐type NiO for pushing the performance limits of power devices.

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Superjunction Power Devices, History, Development, and Future Prospects

Cited by 301 publications

References 58 publications

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Possibility of reducing the on‐resistance in 1 kV‐class lateral superjunction power devices based on III‐V semiconductors

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

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