Superior transport properties of InGaN channel heterostructure with high channel electron mobility

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Zhang, Jinfeng; Zhang, Jincheng

doi:10.7567/apex.9.061003

Cited by 13 publications

(10 citation statements)

References 30 publications

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“…InGaN compound has been widely used as the channel material due to their lower band gap, which can enhance the high frequency characteristics and to prevent current collapse (Lenka et al, 2013;Zhang et al, 2016;Zhang et al, 2015). In this part, the structure design is improved, where the GaN channel is replaced to InGaN compound.…”

Section: Device Channel Layermentioning

confidence: 99%

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Othman

Rahman

Hatta

et al. 2019

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Purpose To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel, as well as study of the effects in the physical dimensions of the HEMT, have been extensively carried out. Findings Critical figure-of-merits, specifically the DC characteristics, 2DEG concentrations and mobility of the heterostructure device, have been evaluated. Significant observations include enhancement of maximum current density by 63 per cent, whereas the electron concentration was found to propagate by 1,020 cm−3 in the channel. Practical implications This work aims to provide tactical optimization to traditional heterostructure field effect transistors, rendering its application as power amplifiers, Monolithic Microwave Integrated Circuit (MMICs) and Radar, which requires low noise performance and very high radio frequency design operations. Originality/value Analysis in covering the breadth and complexity of heterostructure devices has been carefully executed through extensive TCAD modeling, and the end structure obtained has been optimized to provide best performance.

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Section: Device Channel Layermentioning

confidence: 99%

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Othman

Rahman

Hatta

et al. 2019

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“…Due to the superb high-frequency characteristic and highbreakdown voltage, GaN-based high-electron-mobility transistors (HEMTs) have become the most promising candidates for power microwave devices. [1][2][3][4][5][6][7] Conducting current through 2D electron gas (2DEG) localized at the AlGaN/GaN heterojunction interface gives the GaN-based HEMTs a low on-resistance and excellent high-frequency characteristics. To date, further improvement of the high-frequency performance of the devices to meet the requirements of the high-frequency communication field has become the focus of research.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Tang

Liu

Mao

et al. 2022

Physica Rapid Research Ltrs

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Herein, the physical mechanism of the GaN interlayer for improving 2D electron gas (2DEG) mobility in the InGaN channel using an intersub‐band scattering model is systematically elucidated. The model takes into account various scattering mechanisms between the first four sub‐bands, in which the wavefunction of each sub‐band is obtained by self‐consistently solving 1D Schrödinger−Poisson equations. The total 2DEG mobility is obtained by averaging the sub‐band mobility by the percentage of electrons in the different sub‐bands. The effect of introducing different thicknesses of the GaN interlayer on the mobility limited by various scattering mechanisms is discussed in detail, especially polar optical phonon scattering and alloy disorder scattering. The calculated results are well supported by the reported experimental data, validating the correctness of the model.

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“…Ronghua Wang et al fabricated a depletion‐mode HEMT with 11 nm quaternary In 0.13 Al 0.83 Ga 0.04 N barrier and 5 nm In 0.05 Ga 0.95 N channel on SiC substates and featured a record high

\sqrt{f_{T} \cdot f_{normalmax}}

of 239 GHz for InGaN channel HEMTs. Zhang et al adopted a two‐step AlN interlayer in AlGaN/InGaN heterostructures to improve the quality of the interface between barrier and buffer, and obtained a record highest channel electron mobility of 1681 cm 2 V · s −1 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation on Electron Mobility in AlInGaN/InGaN Heterostructures

2019

Physica Status Solidi (b)

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The dependences of electron mobility in AlInGaN/InGaN heterostructure on the barrier and channel alloy compositions and on temperature are investigated including six scattering processes: acoustic deformation potential (DP) scattering, piezoelectric field (PE) scattering, polar optical phonons (PO) scattering, dislocation impurity (DIS) scattering, interface roughness (IRF) scattering, and alloy disorder (ADO) scattering. The results show that ADO scattering is the most important scattering mechanism, and specifically channel alloy disorder gets severer than barrier alloy disorder except for InGaN channels with very low indium content (near 0) or extremely high indium mole fraction (near 1). The variations of the barrier strain, two‐dimensional electron gas (2DEG) density, 2DEG mobility, and conductivity in AlInGaN/In0.04Ga0.96N heterostructure with full barrier alloy composition are summarized. The results indicate that relatively large aluminum content and small indium mole fraction are desired for higher conductivity. By comparing the temperature‐dependent transport properties of Al0.83In0.13Ga0.04N/InGaN heterostructures with different InGaN compositions, we find that it is the ADO scattering and PO scattering that determine 2DEG mobility change and the mobility exhibits a weaker dependence on temperature with increasing indium mole fraction in InGaN channel.

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Superior transport properties of InGaN channel heterostructure with high channel electron mobility

Cited by 13 publications

References 30 publications

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Theoretical Investigation on Electron Mobility in AlInGaN/InGaN Heterostructures

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